Abstract
This chapter consists of three sections. Semiconductor fundamentals are described first, followed by sections on recombination and light-emitting devices.
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References
W. Shockley, “Electrons and Holes in Semiconductors”, l D. van Nostrand, Princeton, 1950.
S. M. Sze, “Physics of Semiconductor Devices”, Wiley, New York, 1969.
See the tutorial survey: H. J. Queisser in “Festkörper-probl.eme”, Volume XI: o. Madelung, editor Pergamon-Vieweg, 1971, P. 45.
D. F. Nelson et al.., Phys. Rev. Lett. 17, 1262 (1966).
For an introduction to the problem of isoel.ectronic traps, see D. G. Thomas in Proceedings of the Eighth Internat. Conf. on the Physics of Semiconductors, Kyoto (1966); J. Phys. Soc. Japan 21, Suppl.. (1966), p. 265. A more recent review is by W. Czaja, same as [3] , P. 65.
D. G. Thomas et al.., Phys. Rev. 133, A 269 (1964).
D. G. Thomas, J. J. Hopfield, and W. M. Augustyniak, Phys. Rev. l40, A 202 (1965).
T. N. Morgan and H. Maier, Phys. Rev. Lett. 27, 1200 (1971).
A. A. Bergh and P. S. Dean, Proc. IEEE 60, 156 (1972).
M. H. Pilkuhn, physica status solidi 25, 9 (1968).
G. Lasher and F.. Stern, Phys. Rev. 133, A 553 (1964).
I. Hayashi, M. B. Panish, P. W. Foy, and S. Sumski, Appl.. Phys. Letters 17, 109 (1970).
A good introduction is the article “A new class of diode lasers” by M. B.Panish and I. Hayashi, Scientific American, July 1971, P. 32.
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© 1973 Plenum Press, New York
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Queisser, H.J. (1973). Semiconductor Electroluminescence and Injection Lasers. In: Hannay, N.B., Colombo, U. (eds) Electronic Materials. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-6890-2_2
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DOI: https://doi.org/10.1007/978-1-4615-6890-2_2
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