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Degradation Mechanisms and Reliability Issues for Ferroelectric Thin Films

Chapter
Part of the Electronic Materials: Science and Technology book series (EMST, volume 3)

Abstract

Ferroelectric perovskite thin films are being developed for a wide range of applications, including nonvolatile memories, high-density DRAMs (≥ 1 Gbit), integrated decoupling capacitors, piezoelectric sensors and actuators, IR detector arrays, and optical switches and modulators. While the fundamental properties (ferroelectric, dielectric, piezoelectric, pyroelectric, and electrooptic) of these materials are well suited to these various applications, the lifetime and reliability of devices is ultimately limited by degradation and aging phenomena [1]. Consequently, there has been extensive research devoted to understanding the mechanisms responsible for the degradation and/or aging of perovskite films with time, temperature, and external field stress [2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19].

Keywords

Electron Paramagnetic Resonance Oxygen Vacancy Switchable Polarization Oxide Electrode Voltage Shift 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1997

Authors and Affiliations

  1. 1.Sandia National LaboratoriesAlbuquerqueUSA

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