Pb(Zr,Ti)O3 Based Thin Film Ferroelectric Nonvolatile Memories
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Ferroelectric thin film semiconductor memories have the potential to dominate world memory markets. Technical developments in the next five years will determine whether ferroelectric thin film memory technology will be the basis of an annual $30 billion market or will be relegated to only niche market status. Among the technologies that ferroelectric random access memories (FERAMs) could replace are electrically erasable programmable read only memories (EEPROMs), Flash nonvolatile memories (FLASH), and dynamic random access memories (DRAMs). Ferroelectric thin film nonvolatile memory technology will be emphasized in this chapter. FERAMs offer advantages of fast write speeds, high endurance and low operating voltage compared to EEPROMs and FLASH technologies. Present FERAM write speeds are approximately two orders of magnitude faster than FLASH and four orders of magnitude faster than EEPROMs. Further, operating voltages are less than 5 volts for FERAMs compared to 12 volt operation for FLASH and EEPROMs. Present FERAM technologies based on Pb(Zr,Ti)O3 (PZT) with oxide electrodes or SrBi2Ta2O9 (SBT) with Pt electrodes provide in excess of 1013 read/write cycles.
KeywordsSmart Card Perovskite Phase Nonvolatile Memory Remanent Polarization Ferroelectric Thin Film
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- 4.J. T. Evans and J. A. Bullington, US Patent No 5 070 385 (3 December 1991).Google Scholar
- 5.J. T. Evans and J. A. Bullington, US Patent No 5 119 329 (2 June 1992).Google Scholar
- 6.J. T. Evans, W. L. Warren, B. A. Tuttle and C. H. Seager, US Patent No 5 578 846 (26 November 1996).Google Scholar
- 11.P. D. Hren, S. H. Rou, H. N. Al-Shareef, M. S. Ameen, O. Auciello and A. I. Kingon, Proc. 3rd Int. Symp. on Integrated Ferroelectrics, 612–626 (1991).Google Scholar
- 12.G. A. C. M. Spierings, J. B. A. Van Zon, M. Klee and P. K. Larsen, Proc. of the Fourth Int. Symp on Int. Ferroelectrics, Monterey, CA, 280–289 (1992).Google Scholar
- 17.J. T. Cheung, P. E. D. Morgan, R. Neurogankar Proceedings of the Fourth International Symposium on Integrated Ferroelectrics, 158–170, editor R. Panholzer, (1992).Google Scholar
- 25.B. A. Tuttle, T. J. Headley, H. N. Al-Shareef, J. A. Voigt, M. Rodriguez, J. Michael and W. L. Warren, J. Matls. Sci., 11(9) 2309–2317 (1996).Google Scholar