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Layered Perovskite Thin Films and Memory Devices

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Thin Film Ferroelectric Materials and Devices

Part of the book series: Electronic Materials: Science and Technology ((EMST,volume 3))

Abstract

This chapter is a review of material which in general had been presented earlier by the author in shorter journal articles.1 It describes particular aspects of an overall paradigm shift in nonvolatile computer memories from silicon-technology based EEPROMs (electrically erasable programmable read-only memories) to devices in which the stored information is coded into + and - polarizations in small (0.7 × 0.7 μm) ceramic thin-film ferroelectrics.2-5 Such devices have erase/rewrite speeds of 60 ns in commercial embodiments and 0.9 ns in laboratory prototypes, many orders of mangintude faster than the speeds of the best EEPROMs,6-8 as summarized in Table I. In addition, they may be integrated directly into GaAs circuitry (not just Si devices), where conventional EEPROMs are impossible, due to the different oxidation rates of Ga and As. Fundamental questions concerning aging of performance, however, have delayed full commercialization.9,10 Because ferroelectrics normally have extremely large dielectric constants, their use as passive elements in computer memories, particularly as non-switching capacitors in DRAMs (dynamic random access memories) is also rapidly evolving.11 Although early prototypes of ferroelectric memories employed many different compounds, including BaMgF4 and KNO3, most recent studies have emphasized lead zirconate-titanate (PZT) for nonvolatile memory elements and barium strontium titanate (BST) as DRAM capacitors. These memory devices are part of an even larger family of integrated ferroelectric devices, summarized in Table II, that include lead-scandium tantalate integrated pyroelectric detectors, GaAs MMIC bypass capacitors, and strontium titanate phased array radars, etc.

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  1. Faculty of Science, University of New South Wales, Sydney, NSW, 2052, Australia

    James F. Scott

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  1. University of Maryland at College Park, USA

    R. Ramesh

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Scott, J.F. (1997). Layered Perovskite Thin Films and Memory Devices. In: Ramesh, R. (eds) Thin Film Ferroelectric Materials and Devices. Electronic Materials: Science and Technology, vol 3. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-6185-9_5

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  • DOI: https://doi.org/10.1007/978-1-4615-6185-9_5

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