Abstract
GaAs layers grown by molecular-beam-epitaxy at low (∼200°C) substrate temperatures (LT-GaAs) are characterized by very short, subpicosecond carrier lifetimes. Because, at the same time, these layers have reasonably high electron mobilities, large resistivities, and high breakdown fields the number of their applications in ultrafast optoelectronic and microwave electronics devices is steadily growing1. Annealed at high temperature LT-GaAs layers are, as a rule, used in these applications. The parameters of as-grown LT-GaAs are by far less documented than such of the annealed layers, mainly as a result of a more complicated experiment in this case. However, the knowledge of as-grown material behaviour is of a crucial relevance to the understanding of the physics lying behind the unique properties of LT-GaAs and other highly nonstoichiometric semiconductors.
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Marcinkevičius, S., Krotkus, A., Viselga, R., Olin, U. (1996). Shorter Than 100 fs Carrier Lifetimes in As-Grown by Low Temperature MBE GaAs. In: Svelto, O., De Silvestri, S., Denardo, G. (eds) Ultrafast Processes in Spectroscopy. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5897-2_47
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DOI: https://doi.org/10.1007/978-1-4615-5897-2_47
Publisher Name: Springer, Boston, MA
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