Abstract
This paper reports: (1) the first observation of intersubband electroluminescence from a single period resonant tunnelling structure; and (2) the observation of intersubband electroluminescence from GaAs/AlGaAs-based quantum cascade structures. Intersubband emission (λ≈8.5μm) with a full width at half maximum of 7meV, was observed from a GaAs/AlGaAs triple barrier structure with quantum well widths of 66Å and 33Å. The emission was coupled out of the sample by a metallic grating with a period of 5μm deposited on the surface. The intensity of emission follows the resonance behaviour in the I-V character istics. In GaAs/AlGaAs quantum cascade structures, a 100Å Al0.15Ga0.85As/Al0.4Ga0.6As quantum well is employed to bridge the individual active regions to enhance the overall quantum efficiency, thus greatly simplifying the design and growth of quantum cascade structures.
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Li, Y.B. et al. (1998). Intersubband Electroluminescence from GaAs/AIGaAs Triple Barrier and Quantum Cascade Structures. In: Li, S.S., Su, YK. (eds) Intersubband Transitions in Quantum Wells: Physics and Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5759-3_6
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DOI: https://doi.org/10.1007/978-1-4615-5759-3_6
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