Asymmetric Field Controlled Thyristors

  • Ranbir Singh
  • B. Jayant Baliga
Part of the The Springer International Series in Engineering and Computer Science book series (PEPS)

Abstract

Fig. 9.1 shows the structure and doping profile Baliga, 1980 of an asymmetric field controlled thyristor (AFCT). To enable this device to conduct current between the anode and cathode terminals, a small positive bias (<1V) is applied between the gate and cathode terminals. The device then behaves like a forward biased P+-i-N diode between the anode and cathode terminals. An AFCT can operate at large current densities with a relatively small forward voltage drop because of a large concentration of excess carriers injected into the N- (drift) region Baliga, 1987.

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Copyright information

© Springer Science+Business Media New York 1998

Authors and Affiliations

  • Ranbir Singh
    • 1
  • B. Jayant Baliga
    • 1
  1. 1.Power Semiconductor Research CenterNorth Carolina State UniversityRaleighUSA

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