Abstract
The high-temperature microstructure of an MgO-sintered Si3N4 (NC-132) was investigated. Thin samples were heated to temperatures between 1350°C and 1650°C for various times and then quenched to “freeze-in” the high-temperature microstructure. The grain-boundary film thickness was found to depend on temperature and residence time prior to quenching. Rapid heating to temperatures just above the eutectic temperature, followed shortly by quenching, resulted in large increases in intergranular film thickness due to solution of Si3N4 in the glass; the large variation in film widths observed at different grain boundaries indicated a condition of nonequilibrium. For higher temperatures and/or longer times at temperatures, the increased amorphous phase at the grain-boundaries could be redistributed to the multiple-grain junctions by either viscous flow or diffusion of Si3N4 due to a chemical potential gradient in the amorphous phase. Redistribution of glass resulted in film thicknesses slightly greater than those found at room temperature, due to small compositional changes of the glass. Equilibrium film thicknesses were obtained when liquid phase redistribution was not kinetically limited.
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References
D.R. Clarke, High-temperature microstructure of a hot-pressed silicon nitride, J. Am. Ceram. Soc., 72:1604(1989).
M.K. Cinibulk, H.-J. Kleebe, G.A. Schneider, and M. Rühle, Amorphous intergranular films in silicon nitride ceramics quenched from high temperatures, J. Am. Ceram. Soc., 76:2801 (1993).
D.R. Clarke, On the equilibrium thickness of intergranular glass phases, J. Am. Ceram. Soc., 70:15 (1987).
M.K. Cinibulk, H.-J. Kleebe, and M. Rühle, Quantitative comparison of TEM techniques for determining amorphous intergranular film thickness, J. Am. Ceram. Soc., 76:426 (1993).
H.-J. Kleebe, M.K. Cinibulk, R.M. Cannon, and M. Rühle, Statistical analysis of the intergranular film thickness in silicon nitride ceramics, J. Am. Ceram. Soc., 76:1969 (1993).
F.F. Lange, Eutectic studies in the system Si3N4-Si2N2O-Mg2SiO4, J. Am. Ceram. Soc. 62:585 (1979).
G.R. Terwilliger and F.F. Lange, Pressureless sintering of Si3N4, J. Mater. Sci., 10:1169 (1975).
W.C. Tripp and H.C. Graham, Oxidation of Si3N4 in the range 1300° to 1500°C, J. Am. Ceram. Soc., 59:399(1976).
D. Cubicciotti and K.H. Lau, Kinetics of oxidation of hot-pressed silicon nitride containing magnesia, J. Am. Ceram. Soc., 61:512 (1978).
R.L. Tsai and R. Raj, The role of grain-boundary sliding in the fracture of hot pressed Si3N4 at high temperatures, J. Am. Ceram. Soc., 63:513 (1980).
S. McKernan, Environmental scanning electron microscopy of ceramics at high temperature, in: Microbeam Analysis, J. Friel, ed., VCH Publishers, New York (1994).
D.R. Clarke, T.M. Shaw, A.P. Philipse, and R.G. Horn, On a possible electrical double layer contribution to the equilibrium film thickness of intergranular glass films in polycrystalline ceramics, J. Am. Ceram. Soc., 76:1201(1993).
R. Raj, Creep in polycrystalline aggregates by matter transport through a liquid phase, J. Geophys. Res., 87:4731 (1982).
G.M. Pharr and M.F. Ashby, On creep enhanced by a liquid phase, Acta Metall. 31:129 (1983).
J.E. Marion, A.G. Evans, M.D. Drory, and D.R. Clarke, High temperature failure initiation in liquid phase sintered materials, Acta Metall., 31:1445 (1983).
J.R. Dryden, D. Kucerovsky, D.S. Wilkinson, and D.F. Watt, Creep deformation due to a viscous grain boundary phase, Acta Metall., 37:2007 (1989).
F.F. Lange, Liquid-phase sintering: are liquids squeezed out from between compressed particles?, J. Am.Ceram. Soc., 65:C–23 (1982).
O.-H. Kwon and G.L. Messing, A theoretical analysis of solution-precipitation controlled densification during liquid-phase sintering, Acta Metall. Mater., 39:2059 (1991).
H.-J. Kleebe, M.J. Hoffmann, and M. Rühle, Influence of the secondary phase chemistry on grain boundary film thickness in silicon nitride, Z. Metallkd., 83:610 (1992).
I. Tanaka, H.-J. Kleebe, M.K. Cinibulk, J. Bruley, D.R. Clarke, and M. Rühle, Calcium concentration dependence of the intergranular film thickness in silicon nitride, J. Am. Ceram. Soc., 77:911 (1994).
Y.-M. Chiang, L.A. Silverman, R.H. French, and R.M. Cannon, Thin glass film between ultrafine conductor particles in thick-film resistors, J. Am. Ceram. Soc., 17:1143 (1994).
C.-M. Wang, X. Pang, M.J. Hoffmann, R.M. Cannon, and M. Rühle, Grain boundary films in rare-earth-glass-based silicon nitride, J. Am. Ceram. Soc., 79:788 (1996).
P. Greil and J. Weiss, Evaluation of the microstructure of β-SiAI0N solid solution materials containing different amounts of amorphous grain boundary phase, J. Mater. Sci., 17:1571 (1982).
I. Tanaka, H.-J. Kleebe, M.K. Cinibulk, J. Bruley, and M. Rühle, Amorphous grain-boundary films in SiO2-containing Si3N4 ceramics, unpublished work.
R.A.L. Drew, S. Hampshire, and K.H. Jack, Nitrogen glasses, Proc. Br. Ceram. Soc., 31:119 (1981).
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Cinibulk, M.K., Kleebe, HJ. (1998). Grain-Boundary Films in A Silicon Nitride Ceramic at High Temperatures. In: Tomsia, A.P., Glaeser, A.M. (eds) Ceramic Microstructures. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5393-9_10
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DOI: https://doi.org/10.1007/978-1-4615-5393-9_10
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