a-Indium Phosphide (a-lnP)
Amorphous indium phosphide (a-InP) is normally prepared by flash-evaporating crystalline InP (see, e.g., Ref. ) or by evaporating the In-P components separately , but it can also be obtained by ion implantation -which, in principle, yields a better-quality material with reproducible properties. Although a-InP could be used in some device applications (photovoltaic devices, nuclear particle detectors, etc.), it remains relatively unexplored.
KeywordsOptical Constant Device Application Strong Absorption Band Photovoltaic Device Amorphous Semiconductor
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