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a-Indium Phosphide (a-lnP)

  • Sadao Adachi
Chapter

Abstract

Amorphous indium phosphide (a-InP) is normally prepared by flash-evaporating crystalline InP (see, e.g., Ref. [1]) or by evaporating the In-P components separately [2], but it can also be obtained by ion implantation [3]-which, in principle, yields a better-quality material with reproducible properties. Although a-InP could be used in some device applications (photovoltaic devices, nuclear particle detectors, etc.), it remains relatively unexplored.

Keywords

Optical Constant Device Application Strong Absorption Band Photovoltaic Device Amorphous Semiconductor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer Science+Business Media New York 1999

Authors and Affiliations

  • Sadao Adachi
    • 1
  1. 1.Department of Electronic EngineeringGunma UniversityKiryu-shi, GunmaJapan

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