a-Indium Phosphide (a-lnP)

  • Sadao Adachi


Amorphous indium phosphide (a-InP) is normally prepared by flash-evaporating crystalline InP (see, e.g., Ref. [1]) or by evaporating the In-P components separately [2], but it can also be obtained by ion implantation [3]-which, in principle, yields a better-quality material with reproducible properties. Although a-InP could be used in some device applications (photovoltaic devices, nuclear particle detectors, etc.), it remains relatively unexplored.


Optical Constant Device Application Strong Absorption Band Photovoltaic Device Amorphous Semiconductor 
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  1. 1.
    M. L. Theye, A. Gheorghiu, D. Udron, C. Senemaud, E. Belin, J. von Bardeleben, S. Squelard, and J. Dupin, W. Prettl, N. J. Shevchik, and M. Cardona, Phys. Status Solidi B 59, 241 (1973).CrossRefGoogle Scholar
  2. 2.
    J. Stuke and G. Zimmerer, Phys. Status Solidi B 49, 513 (1972).CrossRefGoogle Scholar
  3. 3.
    See, for instance, U. G. Akano, I. V. Mitchell, F. R. Shepherd, and C. J. Miner, Can, J. Appl. Phys. 70, 789 (1992).CrossRefGoogle Scholar
  4. 4.
    S. H. Baker, S. C. Bayliss, S. J. Gurman, N. Elgun, and E. A. Davis, J. Phys.: Condens. Matter 8 1591 (1996).CrossRefGoogle Scholar
  5. 5.
    W. Gudat, E. E. Koch, P. Y. Yu, M. Cardona, and C. M. Penchina, Phys. Status Solidi B 52, 505 (1972).CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1999

Authors and Affiliations

  • Sadao Adachi
    • 1
  1. 1.Department of Electronic EngineeringGunma UniversityKiryu-shi, GunmaJapan

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