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Ternary Alloys

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Optical Constants of Crystalline and Amorphous Semiconductors

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Abstract

Group-III nitrides are promising candidates as materials for fabrication of short-wavelength light emitting devices, because the wurtzite polytypes of InN, GaN, and A1N form a continuous alloy system whose direct-band-gap energy ranged from 1.9 eV for InN, 3.4 eV for GaN, and to 6.2 eV for A1N.

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  1. Department of Electronic Engineering, Gunma University, Kiryu-shi, Gunma, 376-8515, Japan

    Sadao Adachi

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Adachi, S. (1999). Ternary Alloys. In: Optical Constants of Crystalline and Amorphous Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5247-5_29

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