Indium nitride (InN), a hexagonal wurtzite III–V semiconductor, has received little attention in the literature. Indeed, crystals with low electron concentrations and high mobilities have been reported only recently [1] (see also Ref. [2]). InN has potential applications in optoelectronics, optical coatings, and various types of sensors. InN is also known to present electrochromism [3].


Thin Solid Film Optical Constant Fuse Quartz Optical Coating Large Single Crystal 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    T. L. Tansley and C. P. Foley, Electron. Lett. 20, 1066 (1984).CrossRefGoogle Scholar
  2. 2.
    S. N. Mohammad, R. A. Salvador, and H. Morkoç, Proc. IEEE 83, 1306 (1995).CrossRefGoogle Scholar
  3. 3.
    O. Takai, J. Ebisawa, and Y. Hisamitsu, in Proc. 7th Intern. Confer. Vac. Metal. (Iron and Steel Institute of Japan, Tokyo, 1982), p. 137.Google Scholar
  4. 4.
    Numerical Data and Functional Relationships in Science and Technology, edited by K.-H. Hellwege and O. Madelung, Landolt-Börnstein, New Series, Group III, Vol. 17, Pt. a (Springer, Berlin, 1982).Google Scholar
  5. 5.
    C. P. Foley and T. L. Tansley, Phys. Rev. B 33, 1430 (1986).CrossRefGoogle Scholar
  6. 6.
    D. W. Jenkins, R.-D. Hong, and J. D. Dow, Superlatt. Microstruct. 3, 365 (1987).CrossRefGoogle Scholar
  7. 7.
    M.-H. Tsai, D. W. Jenkins, J. D. Dow, and R. V. Kasowski, Phys. Rev. B 38, 1541 (1988).CrossRefGoogle Scholar
  8. 8.
    Y.-N. Xu and W. Y. Ching, Phys. Rev. B 48, 4335 (1993).CrossRefGoogle Scholar
  9. 9.
    N. E. Christensen and I. Gorczyca, Phys. Rev. B 50, 4397 (1994).CrossRefGoogle Scholar
  10. 10.
    Q. Guo, O. Kato, M. Fujisawa, and A. Yoshida, Solid State Commun. 83, 721 (1992).CrossRefGoogle Scholar
  11. 11.
    H. J. Hovel and J. J. Cuomo, Appl. Phys. Lett. 20, 71 (1972).CrossRefGoogle Scholar
  12. 12.
    K. Osamura, K. Nakajima, and Y. Murakami, Solid State Commun. 11, 617 (1972).CrossRefGoogle Scholar
  13. 13.
    N. Puychevrier and M. Menoret, Thin Solid Films 36, 141 (1976).CrossRefGoogle Scholar
  14. 14.
    V. A. Tyagaf, A. M. Evstigneev, A. N. Krasiko, A. F. Andreeva, and V. Ya. Malakhov, Sov. Phys. Semicond. 11, 1257 (1977).Google Scholar
  15. 15.
    T. L. Tansley and C. P. Foley, J. Appl. Phys. 59, 3241 (1986).CrossRefGoogle Scholar
  16. 16.
    K. L. Westra, R. P. W. Lawson, and M. J. Brett, J. Vac. Sci. Technol. A 6, 1730 (1988).CrossRefGoogle Scholar
  17. 17.
    T. L. Tansley and R. J. Egan, Thin Solid Films 164, 441 (1988).CrossRefGoogle Scholar
  18. 18.
    T. L. Tansley and C. P. Foley, J. Appl. Phys. 60, 2092 (1986).CrossRefGoogle Scholar
  19. 19.
    K. L. Westra and M. J. Brett, Thin Solid Films 192, 227 (1990).CrossRefGoogle Scholar
  20. 20.
    T. L. Tansley and R. J. Egan, PhySiCa B 185, 190 (1993).CrossRefGoogle Scholar
  21. 21.
    V. V. Sobolev, S. G. Kroitoru, A. F. Andreeva, and Y. Ya. Malakhov, Sov. Phys. Semicond. 13, 485 (1979).Google Scholar
  22. 22.
    V. A. Tyagaf, O. V. Snitko, A. M. Evstigneev, and A. N. Krasiko, Phys. Status SolidiB 103, 589 (1981).CrossRefGoogle Scholar
  23. 23.
    B. T. Sullivan, R. R. Parsons, K. L. Westra, and M. J. Brett, J. Appl. Phys. 64, 4144 (1988).CrossRefGoogle Scholar
  24. 24.
    A. Wakahara and A. Yoshida, Appl. Phys. Lett. 54, 709 (1989).CrossRefGoogle Scholar
  25. 25.
    A. Wakahara, T. Tsuchiya, and A. Yoshida, Vacuum 41, 1071 (1990).CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1999

Authors and Affiliations

  • Sadao Adachi
    • 1
  1. 1.Department of Electronic EngineeringGunma UniversityKiryu-shi, GunmaJapan

Personalised recommendations