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The Interband Transition Region: Amorphous and Microcrystalline Materials

  • Chapter
Optical Properties of Crystalline and Amorphous Semiconductors

Abstract

(a) Definition—The analysis of optical spectra is one of the most useful tools for understanding electronic structure of amorphous semiconductors. Pierce and Spicer [1] performed photoemission measurements on a-Si to study the electronic structure and optical properties of the material. They used a conventional retarding-field energy analyzer and a high-resolution screened-emitter analyzer to measure the energy distribution curves from this material. When the energy distribution curves from c-Si are examined, one finds variations in the position and strength of structure as a result of the conservation of wave vector k in the crystal. However, in amorphous materials no such variations had been found in the energy distribution curves. This is not unexpected because the absence of long-range order in amorphous materials renders the Bloch theorem inapplicable and leaves the crystalline momentum M undefined. They suggested optical transitions in amor- phous semiconductors to be described, to a first approximation, by the nondirect transition model in which conservation of the energy but not wave vector is significant [1].

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Authors and Affiliations

  1. Department of Electronic Engineering, Gunma University, Japan

    Sadao Adachi

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  1. Sadao Adachi
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© 1999 Springer Science+Business Media New York

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Adachi, S. (1999). The Interband Transition Region: Amorphous and Microcrystalline Materials. In: Optical Properties of Crystalline and Amorphous Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5241-3_4

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  • DOI: https://doi.org/10.1007/978-1-4615-5241-3_4

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-7389-6

  • Online ISBN: 978-1-4615-5241-3

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