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Flash Memories pp 37–90Cite as

The Industry Standard Flash Memory Cell

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Abstract

This chapter gives a thorough overview of the Industry Standard Flash Memory Cell. More than 85% of today Flash memories rely on this concept. We will describe the basic structure of the floating gate device, and its operating conditions. We will highlight the main differences in the technology and process with respect to a standard CMOS process. Finally, a brief introduction on some of the more important yield and reliability issues will be given.

Flash, a-ah Savior of the Universe

—Queen, Flash Gordon Soundtrack, 1980

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Authors and Affiliations

  1. Dipartimento di Scienze dell’lngegneria and INFM, Università di Modena e Reggio Emilia, Via Campi 213/B, 41100, Modena, Italy

    Paolo Pavan

  2. STMicroelectronics, Central R&D, Via Olivetti 2, 20041, Agrate Brianza (Milano), Italy

    Roberto Bez

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  1. Paolo Pavan
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  2. Roberto Bez
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© 1999 Springer Science+Business Media New York

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Pavan, P., Bez, R. (1999). The Industry Standard Flash Memory Cell. In: Flash Memories. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5015-0_2

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  • DOI: https://doi.org/10.1007/978-1-4615-5015-0_2

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-0-7923-8487-8

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