Abstract
Auger Electron Spectroscopy (AES)1β6 is an essential tool for analyzing failed ICβs where surface characterization is required. It provides elemental identification and, in some cases, chemical information about substances in highly localized areas in very near-surface regions of materials, thin films, or film interfaces. AES provides excellent spatial resolution, as low as 200 Angstroms diameter. It provides surface analysis of the uppermost 20β50 Angstroms of the sample surface. It has moderate sensitivity with detection limits in the 0.1β1.0% range. Depth profiling can be achieved by specimen sputtering.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Strausser YE. βElemental, Chemical, and Structural Analysis in Electron Beam Column Instruments.β In Encyclopedia of Materials Characterization, C. Evans, R. Brundle, S. Wilson, ed. New York, NY: Butterworth-Heinemann, 1992.
Fatemi H. βMicro and Nano Analyses of Materials.β In Electronic Materials Chemistry, B. Pogge, ed. New York, NY: Marcel Dekker, 1996.
Meieran ES, Flinn PA, Carruthers, JR. Analysis Technology for VLSI Fabrication. Proceedings IEEE, July, 1987,75(7), 908.
Davis LE, MacDonald N, Palmberg PW, Riach GE, Weber RE. Handbook of Auger Electron Spectroscopy, 2nd ed. Eden Prairie, MN: Physical Electronics Industries, 1978.
Burrow B, Morgan AE. Fundamentals and Applications of Auger, ESCA, SIMS, and RBS Analytical Techniques. International Reliability Physics Symposium Tutorial Notes, 1987, 4.1.
Rossiter TJ, Feliciano-Welpe D, Lowry RK, Schuessler P. Surface Analysis Techniques. International Reliability Physics Symposium Tutorial Notes, 1985, 5β1.1.
Pyle R, Kaushik V, Laberge P, Morris S, Martin L, Prack E, Hance R, Bridwell J. An Analytical Study of a Novel and New Failure Mechanism Observed in a High Density CMOS ULSI Device. Proceedings International Symposium for Testing and Failure Analysis, 1995, 129.
Katayama T, Mashiko Y, Mitsuhashi J, Koyama T, Tsukamoto K, Bteda S, Nakayama A, Koyama H, Tsubouchi N. A New Failure Mechanism Related to Grain Growth in DRAMS. Proceedings International Reliability Physics Symposium, 1991, 183.
Tomioka H, Tanage S, Mizukami K. A New Reliability Problem Associated With Ar Sputter Cleaning of Interconnect Vias. Proceedings International Reliability Physics Symposium, 1989, 53.
Tse PK, Picard LJ, Swain JE, Brown RW, Gurnett CJ, Terefenko GJ. Failure Mechanisms of Thin Silicon Tantalum Integrated Circuit (STIC) Resistors on Multi Chip Modules. Proceedings International Reliability Physics Symposium, 1993, 94.
Le TT, Hoang HH, Michlowsky J. An Investigation of Open-Via Failures in ASIC Devices. Proceedings International Symposium for Testing and Failure Analysis, 1991, 129.
Childs KD, Paul DF, Clough SP. Analysis of Sub-Micron Defects on 200MM Wafers with an Auger Based Defect Review Tool. Proceedings Institute of Environmental Sciences, 1996, 147.
Dahlgren DA, Kingsley JR, Reidel PR. Surface Analysis and Bond Pads. Proceedings International Symposium for Testing and Failure Analysis, 1990, 397.
Lowry RK, Linn JH. Characterizing Integrated Circuit Bond Pads. Proceedings International Symposium for Testing and Failure Analysis, 1992, 165.
Ebel G, Hammer H. Case History of Epoxy Contaminated Wire Bond Failures on Space Shuttle Hybrids. Proceedings International Symposium for Testing and Failure Analysis, 1992, 61.
H arman G. Wire Bonding in Microelectronics. Reston, VA: International Society for Hybrid Microelectronics, 1991,91.
Hiraka S, Itabashi M. The Influence of Selenium Deposited on Silver Plating on Adhesive Strength of Die-attachment. Proceedings International Reliability Physics Symposium, 1991, 8.
Walsh LB, Berry KA. Case Histories of Microelectronic Device Analyses Using Auger Electron Spectroscopy. Proceedings International Symposium for Testing and Failure Analysis, 1989, 373.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
Β© 1999 Springer Science+Business Media New York
About this chapter
Cite this chapter
Lowry, R.K. (1999). Auger Electron Spectroscopy. In: Wagner, L.C. (eds) Failure Analysis of Integrated Circuits. The Springer International Series in Engineering and Computer Science, vol 494. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-4919-2_13
Download citation
DOI: https://doi.org/10.1007/978-1-4615-4919-2_13
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4613-7231-8
Online ISBN: 978-1-4615-4919-2
eBook Packages: Springer Book Archive