Skip to main content
SpringerLink
Log in
Book cover

Quantum Semiconductor Devices and Technologies pp 139–181Cite as

The use of MOVPE to produce quantum structured semiconductors

  • Chapter

  • 192 Accesses

Part of the book series: Electronic Materials Series ((EMAT,volume 6))

Abstract

Metal-organic vapor-phase epitaxy (MOVPE) is today a powerful growth technique, capable of producing high-quality material of virtually all III/V and II/VI semiconductor compounds and ternary and quaternary alloys (for an overview, see, for instance, [1] and the references therein). The importance of MOVPE for mass production has been increasing. In terms of consumption of II/V wafer area, MOVPE is today rated second (20%), after liquid-phase epitaxy (LPE, 55%) and in front of the classical vapor-phase epitaxy (VPE, 18%) and the ultra-high-vacuum (UHV) technology molecular beam epitaxy (MBE, 7%) [2]. With the development of larger reactor cells, simultaneously handling up to about 10–15 2” wafers per growth session, this trend will continue. As a consequence, for the practical realization of quantized structures in future mass production technology, MOVPE will be one of the most important growth technologies. In Section 2 of this chapter, we will briefly discuss some principles and specifics of MOVPE, in particular from the perspective of growth on a scale of nanometers.

This is a preview of subscription content, log in via an institution.

Chapter
USD   29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD   84.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD   109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD   109.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Learn about institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. G. B. Stringfellow, Organometallic Vapor-Phase Epitaxy: Theory and Practice (Academic Press, Inc., London, 1989).

    Google Scholar 

  2. R. L. Moon, information given at the 9th International Conference on Metal Organic Vapor Phase Epitaxy 1998, La Jolla, CA.

    Google Scholar 

  3. K. Ploog, Surface Interface Anal. 12, 279 (1988).

    Google Scholar 

  4. L. Samuelson and W. Seifert, in Handbook of Crystal Growth, Vol. 3, edited by D. T. J. Hull (Elsevier, Amsterdam, 1994), pp. 745–783.

    Google Scholar 

  5. P. H. Fuoss, D. W. Kisker, G. B. Stephenson, and S. Brennan, Mater. Sci. Eng. B 30, 99 (1995).

    Article  Google Scholar 

  6. W. Richter and J. T. Zettler, Appl. Surface Sci. 100/101, 465 (1996).

    Article  CAS  Google Scholar 

  7. K. Ploska, J.-T. Zettler, W. Richter, J. Jönsson, F. Reinhardt, J. Rumberg, M. Pris-tovsek, M. Zorn, D. Westwood, R. H. Williams, J. Crystal Growth 145, 44 (1994).

    Article  CAS  Google Scholar 

  8. M. Zorn, T. Trepk, J.-T. Zettler, B. Junno, C. Meyne, K. Knorr, T. Wethkamp, M. Klein, M. Miller, W Richter, and L. Samuelson, Appl. Phys. A 65, 333 (1997).

    Article  CAS  Google Scholar 

  9. K. F. Jensen, in Handbook of Crystal Growth, Vol. 3, edited by D. T. J. Hurle (Elsevier, Amsterdam, 1994), pp. 541–599.

    Google Scholar 

  10. L. Goldstein, F. Glas, J. Y. Marzin, M. N. Charasse, and G. L. Roux, Appl. Phys. Lett. 47, 1099 (1985).

    Article  CAS  Google Scholar 

  11. D. J. Eaglesham and M. Cerullo, Phys. Rev. Lett. 64, 1943 (1990).

    Article  CAS  Google Scholar 

  12. P. M. Petroff and S. P. DenBaars, Superlat. Microstruct. 15, 15 (1994).

    Article  CAS  Google Scholar 

  13. J.-M. Gerard, in Confined Electrons and Photons, Series B340, edited by E. Burstein and C. Weisbuch (Plenum Press, New York, 1995), p. 357.

    Google Scholar 

  14. A. Madhukar, P. Chen, Q. Xie, A. Konkar, T. R. Ramachandran, N. P. Kobayashi, and R. Viswanathan, in Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates, edited by K. Eberl et al. (Kluwer Academic Publishers, Boston, 1995).

    Google Scholar 

  15. R. Nötzel, Semicond. Sci. Technol. 11, 1365 (1996).

    Article  Google Scholar 

  16. W. Seifert, N. Carlsson, M. Miller, M.-E. Pistol, L. Samuelson, and L. R. Wallenberg, Prog. Crystal Growth Characterist. 33, 423 (1996).

    Article  CAS  Google Scholar 

  17. I. N. Stranski and L. Krastanow, Sitz. Ber. Akad. Wiss., Math.-naturwiss. Kl. Abt. IIb 146, 797 (1938).

    CAS  Google Scholar 

  18. M. Volmer and A. Weber, Z. Physik. Chem. 119, 277 (1926).

    CAS  Google Scholar 

  19. M. Pinczolits, G. Springholz, and G. Bauer, Appl. Phys. Lett. 73, 250 (1998).

    Article  CAS  Google Scholar 

  20. C. Ratsch and A. Zangwill, Surf. Sci. 293, 123 (1993).

    Article  CAS  Google Scholar 

  21. V. A. Shchukin, N. N. Ledentsov, P. S. Kop’ev, and D. Bimberg, Phys. Rev. Lett. 75, 2968 (1995).

    Article  CAS  Google Scholar 

  22. A.-L. Barabasi, Appl. Phys. Lett. 70, 2565 (1997).

    Article  CAS  Google Scholar 

  23. I. Daruka and A. L. Barabasi, Appl. Phys. Lett. 72, 2102 (1998).

    Article  CAS  Google Scholar 

  24. B. G. Orr, D. Kessler, C. W Snyder, and L. Sander, Europhys. Lett. 19, 33 (1992).

    Article  CAS  Google Scholar 

  25. D. E. Jesson, K. M. Chen, and S. J. Pennycook, MRS Bull. 21, 31 (1996).

    CAS  Google Scholar 

  26. D. E. Jesson, G. Chen, K. M. Chen, and S. J. Pennycook, Phys. Rev. Lett. 80, 5156 (1998).

    Article  CAS  Google Scholar 

  27. H. T. Dobbs, D. D. Vvedensky, A. Zangwill, J. Johansson, N. Carlsson, and W. Seifert, Phys. Rev. Lett. 79, 897 (1997).

    Article  CAS  Google Scholar 

  28. G. Abstreiter, P. Schittenhelm, C. Engel, E. Silveira, A. Zrenner, D. Meertens, and W Jäger, Semicond. Sci. Technol. 11, 1521 (1996).

    Article  CAS  Google Scholar 

  29. D. I. Westwood, Z. Sobierski, C. C. Matthai, E. Steimetz, T. Zettler, and W. Richter, J. Vac. Sci. Technol. B 16, 2358 (1998).

    Article  CAS  Google Scholar 

  30. M. Zinke-Allmang, L. C. Feldman, and M. H. Grabow, Surf. Sci. Rep. 16, 377–463 (1992).

    Article  CAS  Google Scholar 

  31. J. Johansson, N. Carlsson, and W. Seifert, Physica E 2, 667 (1997).

    Article  Google Scholar 

  32. J. A. Venables, Surface Sci. 299/300, 798 (1994).

    Article  Google Scholar 

  33. D. J. Srolovitz, Acta Metall. 37, 621 (1989).

    Article  Google Scholar 

  34. A. Carlsson, L. P. Wallenberg, C. Persson, and W. Seifert, Surface Science 406, 48 (1998).

    Article  CAS  Google Scholar 

  35. Y. Chen and J. Washburn, Phys. Rev. Lett. 77, 4046 (1996).

    Article  CAS  Google Scholar 

  36. E. Pehlke, N. Moll, A. Kley, and M. Scheffler, Appl. Phys. A 65, 525 (1997).

    Article  CAS  Google Scholar 

  37. S. Ruvimov, P. Werner, K. Scheerschmidt, U. Gösele, J. Heydenreich, U. Richter, N. N. Ledentsov, M. Grundmann, D. Bimberg, V. M. Ustinov, A. Y. Egorov, P. S. Kop’ev, and Z. I. Alferov, Phys. Rev. B 51, 14766 (1995).

    Article  CAS  Google Scholar 

  38. G. Medeiros-Ribeiro, A. M. Bratkovski, T. I. Kamins, D. A. A. Ohlberg, and R. S. Williams, Science 279, 353 (1998).

    Article  CAS  Google Scholar 

  39. F. M. Ross, J. Tersoff, and R. M. Tromp, Phys. Rev. Lett. 80, 984 (1998).

    Article  CAS  Google Scholar 

  40. S. P. DenBaars, C. M. Reaves, V. Bressler-Hill, S. Varma, H. Weinberg, and P. M. Petroff, J. Crystal Growth 145, 721 (1994).

    Article  CAS  Google Scholar 

  41. A. Ponchet, A. L. Corre, H. L’Haridon, B. Lambert, and S. Salaün, Appl. Phys. Lett. 67, 1850 (1995).

    Article  CAS  Google Scholar 

  42. J. Oshinowo, M. Nishioka, S. Ishida, and Y. Arakawa, Appl. Phys. Lett. 65, 1421 (1994).

    Article  CAS  Google Scholar 

  43. F. Heinrichsdorff, A. Krost, M. Grundmann, D. Bimberg, A. Kosogov, and P. Werner, Appl. Phys. Lett. 68, 3284 (1996).

    Article  CAS  Google Scholar 

  44. H. Marchand, P. Desjardins, S. Guillon, J.-E. Paultre, Z. Bougrioua, R. Y.-F. Yip, and R. A. Masut, Appl. Phys. Lett. 71, 527 (1997).

    Article  CAS  Google Scholar 

  45. M. Taskinen, M. Sopanen, H. Lipsanen, J. Tulkki, T. Tuomi, and J. Ahopelto, Surface Sci. 376, 60 (1997).

    Article  CAS  Google Scholar 

  46. N. Carlsson, T. Junno, L. Montelius, M.-E. Pistol, L. Samuelson, and W. Seifert, J. Crystal Growth 191, 347 (1998).

    Article  CAS  Google Scholar 

  47. N. Carlsson, W Seifert, A. Petersson, P. Castrillo, M.-E. Pistol, and L. Samuelson, Appl. Phys. Lett. 65, 3093 (1994).

    Article  CAS  Google Scholar 

  48. M. Sopanen, H. Lipsanen, and J. Ahopelto, Appl. Phys. Lett. 67, 3768 (1995).

    Article  CAS  Google Scholar 

  49. A. Kurtenbach, K. Eberl, and T. Shitara, Appl. Phys. Lett. 66, 361 (1995).

    Article  CAS  Google Scholar 

  50. F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Y. Meltser, P. S. Kop’ev, and Z. I. Alferov, Appl. Phys. Lett. 67, 656 (1995).

    Article  CAS  Google Scholar 

  51. B. M. Kinder and E. M. Goldys, Appl. Phys. Lett. 73, 1233 (1998).

    Article  CAS  Google Scholar 

  52. S. Nakamura and G. Fasol, The Blue Laser Diode (Springer Verlag, Berlin Heidelberg New York, 1997).

    Book  Google Scholar 

  53. S. Keller, B. P. Keller, M. S. Minsky, J. E. Bowers, U. K. Mishra, S. P. DenBaars, and W. Seifert, J. Crystal Growth 189/190, 29 (1998).

    Article  CAS  Google Scholar 

  54. S. Tanaka, S. Iwai, and Y Aoyagi, Appl. Phys. Lett. 69, 4096 (1996).

    Article  CAS  Google Scholar 

  55. F. Widmann, B. Daudin, G. Feuillet, Y. Samson, J. E. Rouviére, and N. Pelekanos, J. Appl. Phys. 83, 7618 (1998).

    Article  CAS  Google Scholar 

  56. H. Yamaguchi, M. R. Fahy, and B. A. Joyce, Appl. Phys. Lett. 69, 776 (1996).

    Article  CAS  Google Scholar 

  57. N. Carlsson, K. Georgsson, L. Montelius, L. Samuelson, W. Seifert, and R. Wallenberg, J. Crystal Growth 156, 23 (1995).

    Article  CAS  Google Scholar 

  58. M. Berti, A. V. Drigo, A. Giuliani, M. Mazzer, A. Camporese, G. Rossetto, and G. Torzo, J. Appl. Phys. 80, 1931 (1996).

    Article  CAS  Google Scholar 

  59. K. Georgsson, N. Carlsson, L. Samuelson, W. Seifert, and L. R. Wallenberg, Appl. Phys. Lett. 67, 2981 (1995).

    Article  CAS  Google Scholar 

  60. A. L. Barabasi and H. E. Stanley, Fractal Concepts in Surface Growth (University Press, Cambridge, 1995).

    Book  Google Scholar 

  61. M. Hata, T. Isu, A. Watanabe, Y. Kajikawa, and Y. Katayama, J. Crystal Growth 114, 203 (1991).

    Article  CAS  Google Scholar 

  62. J. A. Venables, G. D. T. Spiller, and M. Hanbücken, Rep. Prog. Phys. 47, 399 (1984).

    Article  Google Scholar 

  63. M. K. Zundel, P. Specht, K. Eberl, N. Y. Jin-Phillipp, and F. Phillipp, Appl. Phys. Lett. 71, 2972 (1997).

    Article  CAS  Google Scholar 

  64. J. Johansson, W. Seifert, V. Zwiller, T. Junno, and L. Samuelson, Appl. Surface Science 134, 47 (1998).

    Article  CAS  Google Scholar 

  65. W. Seifert, J. Johansson, N. Carlsson, A. Gustafsson, and J.-O. Malm, J. Crystal Growth, 197, 19 (1999).

    Article  CAS  Google Scholar 

  66. W. Seifert, N. Carlsson, A. Petersson, L.-E. Wernersson, and L. Samuelson, Appl. Phys. Lett. 68, 1684 (1996).

    Article  CAS  Google Scholar 

  67. S. Jeppesen, M. Miller, D. Hessman, B. Kowalski, I. Maximov, and L. Samuelson, Appl. Phys. Lett. 68, 2228 (1996).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Solid State Physics, Lund University, Box 118, S-221 00, Lund, Sweden

    Werner Seifert

Authors
  1. Werner Seifert
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Centre de Européen de Recherche de Fontainbleau, Corning, S.A., Avon, France

    T. P. Pearsall

Rights and permissions

Reprints and permissions

Copyright information

© 2000 Springer Science+Business Media New York

About this chapter

Cite this chapter

Seifert, W. (2000). The use of MOVPE to produce quantum structured semiconductors. In: Pearsall, T.P. (eds) Quantum Semiconductor Devices and Technologies. Electronic Materials Series, vol 6. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-4451-7_4

Download citation

  • DOI: https://doi.org/10.1007/978-1-4615-4451-7_4

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-0-7923-7748-1

  • Online ISBN: 978-1-4615-4451-7

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation