Strain and critical thickness

  • S. Jain
  • M. Willander
  • R. Van Overstraeten
Chapter
Part of the Electronic Materials Series book series (EMAT, volume 7)

Abstract

Consider an epilayer of a semiconductor with lattice constant al} grown on a thick substrate with lattice constant asub} (illustrated in Fig. 3.1). The lattice mismatch is measured by the misfit parameter fm} defined below [3, 235]

Keywords

GaAs Nitrides Hull Sapphire ZnSe 

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Copyright information

© Springer Science+Business Media New York 2000

Authors and Affiliations

  • S. Jain
    • 1
  • M. Willander
    • 2
  • R. Van Overstraeten
    • 1
  1. 1.IMEC vzwLeuvenBelgium
  2. 2.Gothenburg UniversityGothenburgSweden

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