Abstract
A large number of techniques have been used to characterize the epilayers. Discussion of all the techniques is beyond the scope of this book. The most extensively used methods are electron microscopy, X-ray diffraction and rocking curves, reflection high energy electron diffraction (RHEED), and optical methods. Recently micro-Raman and magnetic methods have also been used. Micro-Raman method has been reviewed by us recently [52, 141, 142]. We discuss briefly recent developments related to these methods. We also discuss other methods briefly. However we give references to books, reviews and papers for additional information.
Keywords
- Molecular Beam Epitaxy
- GaAs Substrate
- Electron Cyclotron Resonance
- Reflection High Energy Electron Diffraction
- Molecular Beam Epitaxy Growth
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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© 2000 Springer Science+Business Media New York
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Jain, S., Willander, M., Van Overstraeten, R. (2000). Characterization and growth. In: Compound Semiconductors Strained Layers and Devices. Electronic Materials Series, vol 7. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-4441-8_2
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DOI: https://doi.org/10.1007/978-1-4615-4441-8_2
Publisher Name: Springer, Boston, MA
Print ISBN: 978-0-7923-7769-6
Online ISBN: 978-1-4615-4441-8
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