Review of Semiconductor Physics and Devices

  • Sigfrid Yngvesson
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 134)


This book assumes some elementary knowledge of semiconductor physics and devices, corresponding to that acquired in a typical electrical engineering undergraduate curriculum. At the end of this chapter, we quote a few books in this area, which may be useful in reviewing the topics commonly covered in such a course. Since it might be useful to also have the main results, which we need to quote from elementary semiconductor theory, collected in a convenient place, we will briefly review these in this chapter. This review will also serve the purpose of defining a notation which we can use throughout the book. We will cover the important concepts regarding transport of charge carriers in semiconductors: in particular it is useful to review how the concepts of effective mass, mobility and density of states follow from the energy band concept. We also review the properties of p-n-junctions and Schottky barriers, reverse breakdown, and phonons. The expansion of these elementary ideas necessary for the understanding of specific devices will be left to the appropriate later chapters in which these devices are discussed. We prefer this approach to one in which all relevant semiconductor physics would be presented first, on the grounds that the discussion of the physics material can be given a more lively presentation if it is directly connected with the device whose operation it explains.


Energy Band Schottky Barrier Reverse Bias Depletion Region Microwave Device 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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  1. Kittel, C.1978.“Introduction to Solid State Physics,” Fifth Edition,John Wiley &Sons, New York.Google Scholar

Further Reading

  1. Pierret, R.F., and Neudeck, G.W. (1983–1990). “Modular Series on Solid State Devices,” Volumes I-X, Addison-Wesley, Reading, MA. Of special interest are : Vol. VIII, DATTA, S. (1989). “Quantum Phenomena,” and Vol. X, LUNDSTROM, M. (1990). “Fundamentals of Carrier Transport”.Google Scholar
  2. Seeger, K. (1989). “Semiconductor Physics: An Introduction,” Fourth Edition, Springer-Verlag, Berlin.Google Scholar
  3. Shur, M. (1990). “Physics of Semiconductor Devices,” Prentice Hall, Englewood Cliffs, N.J.Google Scholar
  4. Smith, R.A. (1961). “Wave Mechanics of Crystalline Solids,” Chapman & Hall, London.Google Scholar
  5. Sze, S. (1981). “Physics of Semiconductor Devices,” Second Edition, John Wiley & Sons, New York, Ch. 1.Google Scholar
  6. Wang, S. (1989). “Fundamentals of Semiconductor Theory and Device Physics,” Prentice Hall, Englewood Cliffs, N.J.Google Scholar
  7. Watson, H.A., Ed. (1969). “Microwave Semiconductor Devices and Their Circuit Applications,” McGraw-Hill, New York, Chapters 2 through 6.Google Scholar
  8. Wolfe, C.M., Holonyak, Jr., N., and Stillman, G.E. (1989). “Physical Properties of Semiconductors,” Prentice Hall, Englewood Cliffs, N.J.Google Scholar

Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • Sigfrid Yngvesson
    • 1
  1. 1.University of MassachusettsAmherstUSA

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