Abstract
We summarize improvements to the performance of oscillators based on double-barrier resonant-tunneling diodes and their relationship to developments in three material systems. Higher frequencies, and more recently higher output powers, have resulted from these materials developments, so that today waveguide oscillators produce output power of up to a milliwatt at lower frequencies and about one microwatt near 400 GHz. The basic concepts of resonant-tunneling oscillators are described, and the ways in which new materials contribute to improved device characteristics are discussed.
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References
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Sollner, T.C.L.G., Brown, E.R., Söderström, J.R., McGill, T.C., Parker, C.D., Goodhue, W.D. (1991). High-Frequency Oscillators Based on Resonant Tunneling. In: Chang, L.L., Mendez, E.E., Tejedor, C. (eds) Resonant Tunneling in Semiconductors. NATO ASI Series, vol 277. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3846-2_45
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DOI: https://doi.org/10.1007/978-1-4615-3846-2_45
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