Low-Dimensional Resonant Tunneling

  • Philip F. Bagwell
  • Terry P. Orlando
  • Arvind Kumar
Part of the NATO ASI Series book series (NSSB, volume 277)

Abstract

Resonant tunneling occurs for a wide variety of possible device geometries in one, two, and three dimensional conductors. The simplest example is the one and two dimensional analogue of the standard three dimensional resonant tunneling diode. We consider these three resonant tunneling devices operated as either a diode or a transistor by developing a ‘convolution method’ to calculate the device currents. Next, we consider resonant tunneling in a quasi-one-dimensional wire where the normal modes transverse to the tunneling direction cannot be neglected. Many unusual scattering properties, due to the existence of evanescent modes induced by the confinement, are found near quasi-one-dimensional subband minima or quasi-bound states in the wire.

Keywords

Microwave Convolution Paral 

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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • Philip F. Bagwell
    • 1
  • Terry P. Orlando
    • 1
  • Arvind Kumar
    • 1
  1. 1.Department of Electrical Engineering and Computer ScienceMassachusetts Institute of TechnologyCambridgeUSA

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