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Epitaxial Growth of Atomically Smooth GaAs/AlxGa1-xAs Interfaces for Resonant Tunneling

  • Klaus Ploog
Part of the NATO ASI Series book series (NSSB, volume 277)

Abstract

We present a few examples for the effect of interface roughness on the electronic properties of GaAs/AlxGa1-xAs multiple quantum wells and superlattices designed for resonant tunneling and we demonstrate a new procedure to completely eliminate the interface roughness in GaAs/AlxGa1-xAs heterostructures during molecular beam epitaxy.

Keywords

Quantum Well Resonant Tunneling Interface Roughness Stark Shift Excitonic Transition 
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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • Klaus Ploog
    • 1
  1. 1.Max-Planck-Institut für FestkörperforschungStuttgart-80FR-Germany

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