Band Structure Effects on Stark Levels and Real Space Electron Transfer in Perfect and Imperfect Quantum Wells and Superlattices

  • M. Jaros
  • J. P. Hagon
  • L. D. L. Brown
Part of the NATO ASI Series book series (NSSB, volume 277)

Abstract

We have studied the effects of level crossing and valley mixing on Stark shifts, electron lifetimes, and cross interface electron transfer in perfect and, for the first time, also in imperfect GaAs-AlAs heterostructures. We identify the limits of applicability of the particle in a box picture for modelling Stark resonances. We find that the valley mixing is strong in the vicinity of X-resonances and determine their effective widths. In particular, in type II structures with medium thick (e.g. 100Å) barriers transfer into X-levels is fast compared to the relevant tunnelling time. The phonon-assisted Γ-X transfer is reduced compared to that in bulk GaAs. The breakdown of the translational symmetry in the interface plane has a small effect on valley mixing in the growth direction but strongly affects the states in the interface plane.

Keywords

Recombination Radar GaAs Auger 

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References

  1. 1.
    M.A. Gell, D. Ninno, M. Jaros, D.J. Wolford, T.F. Keuch and J.A. Bradley, Effects of alloying and hydrostatic pressure on electronic and optical properties of GaAs-AlxGa1-xAs superlattices and multiple-quantum-well structures, Phys. Rev. B, 35:1196 (1987).ADSCrossRefGoogle Scholar
  2. 2.
    P.M. Solomon, S.L. Wright and C. Lanza, Perpendicular transport across (Al,Ga)As and the Γ to X transition, Superlattices and Microstructures, 2:521 (1986).ADSCrossRefGoogle Scholar
  3. 3.
    M. Dutta, K.K. Choi and P.G. Newman, Thermionic emission and photoluminescence studies of the energy states of GaAs/AlAs superlattices, Appl. Phys. Lett., 55:2429 (1989)ADSCrossRefGoogle Scholar
  4. 4.
    Y. Zohta, Analysis of Thermionic Emission Current over the AlxGa1-xAs Barrier in a GaAs/AlxGa1-xAs/GaAs (x>0.45 Structure, Jap. J. Appl. Phys., 27:L906 (1988).ADSCrossRefGoogle Scholar
  5. 5.
    E.E. Mendez, E. Calleja, C.E.T. Goncalves da Silva, L.L. Chang and W.I. Wang, Observation by resonant tunneling of high-energy states in GaAs-Ga1-xAlxAs quantum wells, Phys. Rev. B, 33:7368 (1986).ADSCrossRefGoogle Scholar
  6. 6.
    T.W. Steiner, D.J. Wolford, T.F. Keuch and M. Jaros, Auger decay of X-point excitons in a type II GaAs/A1GaAs superlattice, Superlattices and Microstructures, 4:227 (1988).ADSCrossRefGoogle Scholar
  7. 7.
    M.S. Skolnick, G.W. Smith, I.L. Spain, C.R. Whitehouse, D.C. Herbert, D.M. Whittaker and L.J. Reed, Phonon coupling and X-Γ mixing in GaAs-AlAs short period superlattices, Phys. Rev. B, 39:11191 (1989).ADSCrossRefGoogle Scholar
  8. 8.
    G. Li, D. Jiang, H. Han, Z. Wang and K. Ploog, Type-I -type-II transition of GaAs/AlAs short-period superlattices investigated by photoluminescence spectroscopy under hydrostatic pressure, Phys. Rev. B. 40:1989.Google Scholar
  9. 9.
    N.J. Pulsford, R.J. Nicholas, P. Dawson, K.J. Moore, G. Duggan and C.T.B. Foxon, Γ-X Mixing in the Miniband Structure of a GaAs/AlAs Superlattice, Phvs. Rev. Lett., 63:2284 (1989).ADSCrossRefGoogle Scholar
  10. 10.
    Y. Masumoto, T. Mishina, F. Sasaki and M. Adachi, Interlayer Γ-X scattering in staggered-alignment A10.34Ga0.66As-AlAs ternary alloy multiple-quantum-well structures, Phys, Rev. B, 40:8581 (1989).ADSCrossRefGoogle Scholar
  11. 11.
    D.Z.-Y. Ting, Y.-C. Chang, Γ-X mixing in GaAs/AlxGa1-xAs and AlxGa1-xAs/AlAs superlattices, Phys. Rev. B, 36:4359 (1987).ADSCrossRefGoogle Scholar
  12. 12.
    Yan-Ten Lu and L.J. Sham, Valley mixing effects in short period superlattices, Phys. Rev. B. 40:5567 (1989).ADSCrossRefGoogle Scholar
  13. 13.
    T. Ando and H. Akera, Connection of envelope functions at semiconductor heterointerfaces. II. Mixings of Γ and X valleys in GaAs/AlxGa1-xAs, Phys. Rev, B, 40:11619 (1989).ADSCrossRefGoogle Scholar
  14. 14.
    L.D.L. Brown and M Jaros, Pressure-induced momentum mixing in GaAs-AlAs superlattices, Phys. Rev. B, 40:10625 (1989).ADSCrossRefGoogle Scholar
  15. 15.
    I. Morrison, L.D.L. Brown and M. Jaros, unpublished.Google Scholar
  16. 16.
    L.D.L. Brown, M. Jaros and D.J. Wolford, The splitting of the states derived from the bulk X minima in GaAs-AlAs superlattices, Phys. Rev. B. 40:6413 (1989).ADSCrossRefGoogle Scholar
  17. 17.
    M. Jaros, Physics and Applications of Semiconductor Microstructures, (OUP, Oxford 1989).Google Scholar
  18. 18.
    J.P. Hagon, M. Jaros and D.C. Herbert, Effect of band structure on Stark shifts in GaAs quantum wells, Phys. Rev. B, 40:6420 (1989); J.P. Hagon and M. Jaros, Stark shifts in GaAs-Ga1-xAlxAs finite-length superlattices, Phys. Rev. B. 41:2900 (1990).Google Scholar
  19. 19.
    E.J. Austin and M. Jaros, Electronic structure of an isolated GaAs-GaAlAs quantum well in a strong electric field, Phys. Rev. B. 31, 5569 (1985), Electronic structure and transport properties of GaAs-GaAlAs superlattices in high perpendicular electric fields, J. Appl. Phys. 62: 558 (1987).Google Scholar
  20. 20.
    M. Jaros, Deep Levels in Semiconductors, (Hilger, Bristol, 1982).CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • M. Jaros
    • 1
  • J. P. Hagon
    • 1
  • L. D. L. Brown
    • 1
  1. 1.Physics DepartmentThe University Newcastle upon TyneUK

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