Abstract
Zener-tunneling involves the coupling in a strong electric field E of filled valence band states with conduction band levels. The interaction is based on tunneling through a barrier of height E g and with range of length E g /eE. The effect is important for the energy and the broadening of subbands on the surface of narrow-gap HgCdTe. We show how the influence of the Zener-tunneling on the subbands can be observed in resonant excitation experiments. The strength of the tunneling interaction is obtained from observations on the Fano-lineshape in the subband resonance.
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© 1991 Springer Science+Business Media New York
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Sizmann, R., Koch, F. (1991). The Role of Zener-Tunneling in the Subband Structure of Narrow-Gap Semiconductors. In: Chang, L.L., Mendez, E.E., Tejedor, C. (eds) Resonant Tunneling in Semiconductors. NATO ASI Series, vol 277. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3846-2_12
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DOI: https://doi.org/10.1007/978-1-4615-3846-2_12
Publisher Name: Springer, Boston, MA
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