Abstract
This chapter is concerned with growth of single crystals from melts of semiconductors. In the case of compound semiconductors, these melts are stoichiometric or nearly so. The production of semiconductors in single-crystal form is a core requirement of almost all semiconductor device technology. As a consequence, the whole field of crystal growth technology is strongly device driven and sensitive to commercial pressures related to production efficiency, quality, etc. Thus a fuller understanding of the evolution of a particular crystal growth technology requires an appreciation of the commercial background of the subject. Only cursory consideration can be given to these commercial aspects in this chapter. Here we are primarily concerned with the principles and concepts underlying the growth of single crystals from the melt.
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References
D. T. J. Hurle, Constitutional supercooling during crystal growth from stirred melts: I: Theoretical, Solid State Electron. 3, 37 (1961).
K. F. Hulme and J. B. Mullin, Facets and anomalous solute distributions in InSb crystals, Phil. Mag. 4, 1286 (1959).
G. K. Teal, Preparation of germanium single crystal by the pulling method: Introduction in Transistor Technology(H. E. Bridgers, J. H. Scoff, and J. N. Shive, eds.), Vol. I, Chap. 4. Van Nostrand, New York (1955).
J. B. Mullin, B. W. Straughan, and W. S. Brickell, Liquid encapsulation techniques: the use of an inert liquid in suppressing dissociation during the melt growth of InAs and GaAs crystals, J. Phys. Chem. 26, 782 (1965).
E. P. A. Metz, R. C. Miller, and R. Mazelsky, A technique for pulling single crystals of volatile materials, J. Appl. Phys. 33, 2016 (1962).
J. B. Mullin, R. J. Heritage, C. H. Holliday, and B. W. Straughan, Liquid Encapsulation crystal pulling at high pressures, J. Crystal Growth 314, 281 (1968).
E. M. Swiggard, S. H. Lee, and F. W. Van Batchelder, GaAs synthesised in pyrolytic boron nitride (PBN), in Proc 6th Int Symp on Gallium Arsenide and Related Compounds, St. Louis, 1976, Inst. Phys. Conf Series No. 33b, 23, Institute of Physics, London (1977).
J. B. Mullin, Melt growth of III-V compounds by the Liquid Encapsulation and Horizontal Growth techniques, in III- V Semiconductor Materials and Devices(R. J. Malik, ed.), Chap. 1, pp. 1–72, Elsevier, New York (1989).
International Conferences on Crystal Growth, ICCG 1, Crystal Growth, Pergamon (1967); ICCG 2–9, J. Crystal Growth, Elsevier North-Holland (1968–1990).
Progress in Crystal Growth and Characterization, Pergamon, New York.
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© 1991 Springer Science+Business Media New York
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Mullin, J.B. (1991). Single Crystal Growth I: Melt Growth. In: Miller, L.S., Mullin, J.B. (eds) Electronic Materials. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3818-9_9
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DOI: https://doi.org/10.1007/978-1-4615-3818-9_9
Publisher Name: Springer, Boston, MA
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