Abstract
The last few decades have seen a revolution in the field of electronics and a tremendous increase in the number of applications of crystalline semiconductors such as silicon. These developments were possible because the electrical conductivity of crystalline silicon can be controlled over many orders of magnitude by doping, that is, by the addition during growth of the crystal of small concentrations of impurities. However, there are a number of areas where the expense of preparing these crystals and where the limited size to which they can be grown (at present about 25 cm in diameter) have prevented any very large-area applications. For example, crystalline silicon solar cells are widely used in space vehicles for converting sunlight into electrical power, but the economics of their production is such that their use here on earth is relatively limited.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
General
W. E. Spear and P. G. LeComber, Solid State Commun. 17, 1193–1196 (1975); Phil. Mag. 33, 935–949 (1976).
H. F. Sterling and R. C. G. Swann, Solid State Electron. 8, 653–654 (1965); R. C. Chittick, J. H. Alexander, and H. F. Sterling, J. Electrochem. Soc. 116, 77–91 (1969).
W. E. Spear, P. G. LeComber, S. Kimmond, and M. H. Brodky, Appl. Phys. Lett. 28, 105–107 (1976).
D. E. Carlson and C. R. Wronski, Appl. Phys. Lett. 28, 671–673 (1976).
Semiconductors and Semimetals, Vol. 21D (J. I. Pankove, ed.), Academic, New York (1984).
Review articles in recent Proceedings of the International Conferences on Amorphous and Liquid Semiconductors, viz., J. Non-Crystal. Solids 77/78 (1985), Rome Conference; J. Non-Crystal. Solids 97/98 (1987), Prague Conference; P. G. Le Comber, J. Non-Crystal. Solids 115, 1–13 (1989).
a-Si FETs and Displays
P. G. LeComber, W. E. Spear, and A. Ghaith, Electron. Lett. 15,179 (1979).
A. J. Snell, K. D. Mackenzie, W. E. Spear, P. G. LeComber, and A. J. Hughes, Appl. Phys. 24, 357 (1981).
P. G. LeComber, A. J. Snell, K. D. Mackenzie, and W. E. Spear, J. Phys. (Paris) 42, Supp. C4, 423 (1981).
K. D. Mackenzie, A. J. Snell, I. French, P. G. LeComber, and W. E. Spear, Appl. Phys. A31, 87 (1983).
P. G. LeComber and W. E. Spear, Chap. 6 of Semiconductors and Semimetals (J. Pankove, ed.), Vol. 21D, 89, Academic, New York (1984).
D. G. Ast, Chap. 7 of Semiconductors and Semimetals (J. Pankove, ed.), Vol. 21D, pp. 115–138, Academic, New York (1984).
P. G. LeComber, Materials Research Society Symposia Proceedings, Vol. 49, pp. 341–351 (1985), and references cited therein.
M. J. Powell et al. Proc. Int. Display Research Conference, pp. 63–66 (1987).
T. Chikamura, S. Hotta, and S. Nagata, Materials Research Society 1987 Spring Meeting; S. Hotta et al., SID 1986 Digest,pp. 296–297.
High-Voltage TFTs
H. C. Tuan, Materials Research Society Symposia Proceedings, Vol. 70, pp. 651–656 (1986).
Chuang et al.,J. Non-Crystal. Solids 97/98,301–304 (1987).
Electrophotography
I. Shimizu, Semiconductors and Semimetals (J. Pankove, ed.), 21D,Vol. 55–73 (1984).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1991 Springer Science+Business Media New York
About this chapter
Cite this chapter
LeComber, P.G. (1991). Amorphous Silicon-Electronics into the 21st Century. In: Miller, L.S., Mullin, J.B. (eds) Electronic Materials. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3818-9_11
Download citation
DOI: https://doi.org/10.1007/978-1-4615-3818-9_11
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4613-6703-1
Online ISBN: 978-1-4615-3818-9
eBook Packages: Springer Book Archive