Abstract
Semimagnetic IV–VI compounds have been studied for about a decade. Nevertheless the amount of knowledge which has been accumulated is much less than compared to the situation in A II1-X MnXBVI or A II1-X FeXBVI alloys. The complications due to the many valley band structure, the fact that the band edge functions are composed of a combination of s, p, and d — like functions as well as general material properties make this class more difficult to deal with.1 In PbTe, PbSe, PbS the group IV element has been replaced by Mn2+, Eu2+ Gd2+ and Fe2+. These IV–VI compounds have, for not too high concentrations of the magnetic ions, a direct narrow gap at the L-point of the Brillouin zone. A two band model is approximately valid for the electrons and holes. The mass anisotropies K = ml/mt vary from 10 (PbTe) via 2 (PbSe) to about 1(PbS). In the pseudobinary alloys the magnetic ions cause an increase of the energy gap with composition x. Especial-ly the systems Pb1−X EuXTe 2 and Pb1−xEuXSe 3 have found applications as mid infrared lasers because of the tuning of the energy gap with composition x.
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Bauer, G., Pascher, H. (1991). Semimagnetic IV–VI Compound Semiconductors. In: Averous, M., Balkanski, M. (eds) Semimagnetic Semiconductors and Diluted Magnetic Semiconductors. Ettore Majorana International Science Series, vol 55. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3776-2_9
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