Abstract
Zinc selenide possesses a number of valuable physical properties: high photosensitivity, electrooptical effect, piezo effect, and high refractive index [1]. Due to a wide forbidden band (2.8 eV at 4.2 K), ZnSe emits in the blue spectral region which makes it a promising material for use in light-emitting devices. However, the physical properties of ZnSe are exceedingly sensitive to variations of chemical composition and to the actual crystal structure of the specimens. The type of faults which arise in the crystal and their concentration and distribution are determined by the growth mechanisms, incorporation and diffusion of dopants, and by the temperature. Therefore, they depend intricately on the method and conditions of crystal growth [2].
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Galstyan, V.G., Deigen, M.I., Muratova, V.I., Semiletov, A., Stankevich, V.C., Tikhonova, A.A. (1991). Relation Between Growth Conditions, Structure, and Cathodoluminescence of Epitaxial Layers of Znse on GaAs. In: Bagdasarov, K.S., Lube, É.L. (eds) Growth of Crystals. Growth of Crystals, vol 16. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3662-8_9
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DOI: https://doi.org/10.1007/978-1-4615-3662-8_9
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