Abstract
As soon as a semiconductor is brought into contact with a gaseous medium, its surface begins to be covered by the molecules of the gas, i.e., adsorption has set in. The process ceases when an equilibrium between the surface and the gaseous phase is established, Le., when the number of molecules passing from the gaseous phase to the surface per unit time is equal (on the average) to the number of molecules leaving the surface for the gas over the same interval. The presence of the molecules adsorbed by the semiconductor surface changes the properties of the latter. Thus, adsorption is the agent by which the ambient acts on the surface and, indirectly, on some of the bulk properties of the semiconductor .
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
I. Langmuir, J. Am. Chem. Soc., 38, 2217 (1916).
S. Z. Roginskii (Roginsky) and Ya. B. Zel’dovich (Zeldovitch), Acta Physicochim. URSS, 1,554,595 (1934).
H. S. Taylor and N. Thon, J. Am. Chem. Soc., 74, 4169 (1952).
F. S. Stone, in: Chemistry of the Solid State, ed. by W. E. Garner, Butterworths, London (1955), p. 367.
J. M. Thuillier, Ann. Phys. (Paris), 5,865 (1960).
R. Schuttler and J. M. Thuillier, C. R. Acad. Sci., 355, 877 (1962).
D. H. Bangham and F. P. Burt, Proc. R. Soc. London, Ser A, 105, 481 (1924); D. H. Bangham and W. Sever, Philos. Mag., 49, 938 (1928).
H. Freundlich, Kapillarchemie, Academische Verlag, Leipzig (1922).
A. N. Frumkin and M. Shlygin, Acta Physicochim. URSS, 3, 791 (1935).
F. V. Lenel, Z. Phys. Chem., (Leipzig) B23, 379 (1933).
W. J. C. Orr, Trans.Faraday Soc., 35, 1247 (1939).
J. E. Lennard-Jones, Trans. Faraday Soc., 28,333 (1932).
Th. Wolkenstein, Zh. Fiz. Khim., 23, 917 (1949); Probi. Kinet. Katal., 7,360 (1949).
Th. Wolkenstein, Zh. Fiz. Khim, 27, 159, 167 (1958); Usp. Fiz. Nauk., 50, 253 (1953).
Th. Wolkenstein, Zh. Fiz. Khim., 21 163 (1947).
Th. Wolkenstein, Zh. Fiz. Khim., 22,311 (1948).
Th. Wolkenstein, Zh. Fiz. Khim., 26, 1462 (1952).
Th. Wolkenstein, Zh. Fiz. Khim., 28, 422 (1954).
Th. Wolkenstein and S. Z. Roginskii, Zh. Fiz. Khim., 29, 485 (1955).
Th. Wolkenstein, Usp. Fiz. Nauk, 60, 249 (1956).
Th. Wolkenstein, Zh. Fiz. Khim., 21, 1317 (1947).
V. L. Bonch-Bruevich, Zh. Fiz. Khim., 25, 1033 (1951).
Th. Wolkenstein, Izv. Akad. Nauk SSSR, Otd. Khim. Nauk, No. 8, 916 (1957); J. Chim. Phys., 54, 175 (1957).
T. B. Grimley, Proc. Phys. Soc., London, 72, 103 (1958).
J. Koutecky, Proc. Phys. Soc., London, 73,323 (1959).
É. L. Nagaev, in: Scientific Conference of Junior Scientists [in Russian], Moscow University Press, Moscow (1959), p. 18.
Th. Wolkenstein, Izv. Akad. Nauk. SSSR, Otd. Khim. Nauk, No.2, 147 (1957).
Th. Wolkenstein, Probi. Kinet. Katal., 8, 79 (1955).
Th. Wolkenstein, Izv. Akad. Nauk. SSSR, Otd. Khim. Nauk, No. 8, 924 (1957); J. Chim. Phys., 54, 181(1957).
Th. Wolkenstein and V. L. Bonch-Bruevich, Zh. Eksp. Teor. Fiz., 20, 624 (1950).
Th. Wolkenstein, Zh. Eksp. Teor. Fiz., 22, 184 (1952).
Th. Wolkenstein, Usp. Khim., 27, 1304 (1958); Chem. Tech., 11, 8, 103 (1959).
V. L. Bonch-Bruevich and V. B. Glasko, Vestn. Mosk. Gos. Univ., No. 5, 91 (1958); Dokl. Akad. Nauk SSSR, 124,1015 (1959).
Th. Wolkenstein, Kinet. Katal., 19, 90 (1978).
J. C. Slater, Phys. Rev., 38, 1109 (1931).
A. A. Balandin, The Current State of the Multiplet Theory of Heterogeneous Catalysis [in Russian], Nauka, Moscow (1968).
S. R. Morrison, The Chemical Physics of Surfaces, Plenum Press, New York (1977).
K. H. Johnson and R. P. Messmer, J. Vac. Sci. Technoi., 11, 235 (1974).
A. P. Zeif, in: Elementary Physicochemical Processes at the Surfaces of Single Crystal Semiconductors [in Russian), Nauka, Novosibirsk (1975).
G. M. Zhidomirov, Kinet. Katal., 18, 1192 (1977).
R. P. Messmer, in: Semiempirical Methods of Electronic Structure Calculation, Part B: Applications (G. A. Segal, ed.), Plenum Press, New York (1977).
G. V. Gadiyak, A. A. Karpushin, and Yu. N. Morokov, in: The Problems of the Physical Chemistry of Semiconductor Surfaces [in Russian), Nauka, Novosibirsk (1978), p. 72.
H. Dunken and V. Lygin, Quantenchemie der Adsorption an Festkörperoberflächen, Deutscher Verlag, Leipzig (1978).
A. W. Goddard, and T. C. McGill, J. Vac. Sci. Technoi., 16, 1308 (1979).
C. W. Bauschlichter, P. S. Bagus, and H. F. Schaefer, IBM J. Res. Dev., 22, 213 (1978).
C. Pisani and F. Ricca, Surf Sci., 92, 481 (1980).
I. D. Mikheikin, I. A. Abronin, G. M. Zhidomirov, and V. B. Kazanskii (Kazansky), J. Mol. Catal., 3, 435 (1977/78).
I. D. Mikheikin, I. A. Abronin, G. M. Zhidomirov, and V. B. Kazanskii, Kinet. Katal., 18, 1580 (1977).
I. D. Mikheikin, A. I. Lumpov, G. M. Zhidomirov, and V. B. Kazanskii, Kinet. Katal., 19, 1053 (1978).
I. D. Mikheikin, A. I. Lumpov, and G. M. Zhidomirov, Kinet Katal., 20, 501 (1979).
A. G. Pel’menshchikov, I. N. Senchenya, G. M. Zhidomirov, and V. B. Kazanskii, Kinet. Katal., 24, 233 (1983).
V. A. Korsunov, N. D. Chuvylkin, G. M. Zhidomirov, and V. B. Kazanskii, Kinet. Katal., 19, 1152 (1978).
V. A. Korsunov, N. D. Chuvylkin, G. M. Zhidomirov, and V. B. Kazanskii, Kinet. Katal., 21, 402 (1980).
Rights and permissions
Copyright information
© 1991 Consultants Bureau, New York
About this chapter
Cite this chapter
Wolkenstein, T. (1991). The Various Types of Adsorption. In: Electronic Processes on Semiconductor Surfaces during Chemisorption. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3656-7_2
Download citation
DOI: https://doi.org/10.1007/978-1-4615-3656-7_2
Publisher Name: Springer, Boston, MA
Print ISBN: 978-0-306-11029-0
Online ISBN: 978-1-4615-3656-7
eBook Packages: Springer Book Archive