Investigation of an rf plasma-induced low temperature technique for the deposition of copper from copper formate precursor films, spin coated on silicon substrates, has been continued. The purity of the deposited copper films is a strong function of the process parameters. Exposure of the copper formate film to hydrogen and oxygen plasmas, alternately, resulted in efficient removal of carbon from the copper films. The effect of reduction time, plasma power density and substrate temperature on film purity has been investigated. The elemental composition of the films, as a function of depth, was determined by Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS) combined with ion beam depth profiling. Intermixing of copper with the silicon substrate was observed at high substrate temperatures (>225 °C), with possible formation of copper silicide.
KeywordsPower Density Auger Electron Spectroscopy Oxygen Plasma High Power Density Copper Film
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