Abstract
The optical properties of semiconductor quantum well and superlattice structures in the (far) infrared spectral region are determined by transitions between electronic subbands. Since the first observation of intersubband absorption in a quantum well was reported1 in 1985, there has been steadily growing interest in the detailed physical properties of intersubband transitions as well as in possible applications in various areas of electro-optics and optoelectronics, many of which are reviewed in this volume. The most obvious application, as an infrared photon detector,2 has been discussed extensively in the literature. Other applications, for example in nonlinear optical devices,3 begin to emerge.
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Helm, M. (1992). Far-Infrared Emission and Absorption Spectroscopy of Quantum Wells and Superlattices. In: Rosencher, E., Vinter, B., Levine, B. (eds) Intersubband Transitions in Quantum Wells. NATO ASI Series, vol 288. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3346-7_14
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DOI: https://doi.org/10.1007/978-1-4615-3346-7_14
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