Abstract
In this chapter, we introduce a variety of digital BiCMOS circuit structures such as the totem-pole BiCMOS gate and the merged MOS/bipolar current mode circuits. This chapter starts with a brief comparison between MOS and bipolar devices in terms of their current drive capabilities. The advantage of using bipolar devices for the totem-pole structure is demonstrated in Section 7.2. In that, we study the DC and transient characteristics of the BiCMOS inverter. The transient behaviour is analyzed in detail to derive a delay model. This model is then used to understand the critical device and circuit parameters for the design of the BiCMOS gate. It also serves as the basis for a comparison between CMOS and BiCMOS for different loading conditions. In Section 7.3, we discuss the performance of conventional totem-pole circuits for low power supply voltage. Several full-swing BiCMOS structures, which are suitable for low voltage applications, are introduced. In Section 7.4, we also consider the use of BiCMOS for integrating CMOS with current mode logic in a single system. Some of the basic cells required for such applications are introduced.
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Embabi, S.H.K., Bellaouar, A., Elmasry, M.I. (1993). BiCMOS Digital Integrated Circuits. In: Digital BiCMOS Integrated Circuit Design. The Springer International Series in Engineering and Computer Science, vol 193. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3174-6_7
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DOI: https://doi.org/10.1007/978-1-4615-3174-6_7
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