Introduction

  • Sherif H. K. Embabi
  • Abdellatif Bellaouar
  • Mohamed I. Elmasry
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 193)

Abstract

The evolution of digital intergated circuit technology went through several phases starting with bipolar in the 1950s and 60s to NMOS in the 70s until the 1980s when CMOS became the mainstream technology. The demand for superior performance, which has motivated the relentless search and development of new technologies, was behind the emergence of BiCMOS. It is the technology which merges old rivals, namely, CMOS and bipolar, to complement each other so that the strength of one covers the weakness of the other. This concept was first proposed by Lin et al. in 1969 [1]. The progress achieved in the silicon processing technology in the ?0s and the 80s motivated the revival of the idea of merging CMOS and bipolar. Since the mid 80s enormous resources have been devoted towards the development of several versions of BiCMOS processes, and real BiCMOS products and systems have been shipped out.

Keywords

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References

  1. 1.
    H.C. Lin, J.C. Ho, R.R. Iyer, and K. Kwong, “CMOS-Bipolar Transistor Structure,” IEEE Trans. Electron Devices, Vol. ED-6, No. 11 pp. 945–951 (November 1969).Google Scholar
  2. 2.
    A.P. Chandrakasam et al., “Low-Power CMOS Digital Design,” IEEE J. Solid-State Circuits, pp. 473–484 (April 1992).Google Scholar
  3. 3.
    R.H. Eklund, “BiCMOS Process Integration,” IEDM Short Course, (Dec. 1991).Google Scholar

Copyright information

© Springer Science+Business Media New York 1993

Authors and Affiliations

  • Sherif H. K. Embabi
    • 1
  • Abdellatif Bellaouar
    • 2
  • Mohamed I. Elmasry
    • 2
  1. 1.Texas A & M UniversityUSA
  2. 2.University of WaterlooCanada

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