Abstract
With illumination by femtosecond laser pulses at an oblique incident angle, a semiconductor sample emits subpicosecond submillimeter-wave radiation1. This phenomenon was interpreted as radiation from accelerated photocarriers in the surface depletion field1 and the dependence of the radiation on crystal rotation symmetry was explained as strong evidence of X (3) related optical rectification2. More recently, quantum well structures have been used to limit the carrier transport. This allows examination of the mechanism of optical rectification as well as the study of electron coherent oscillations in a double-well potential3. To distinguish between the contribution from carrier transport and from optical rectification is crucial for a physical understanding of the origin of the radiation, as well as for realizing an intense THz source application.
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References
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When the optical pulse duration is less than or comparable with the crystal dielectric relaxation time or carrier momentum dephasing time T2, the nonlinear polarization can hold longer than the optical pulse duration, and d14 can be very dispersed, especially under a resonant excitation.
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© 1993 Springer Science+Business Media New York
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Zhang, XC., Jin, Y., Hewitt, T.D., Sangsiri, T., Kingsley, L., Weiner, M. (1993). Terahertz Radiation from Electro-Optic Crystals. In: Bertoni, H.L., Carin, L., Felsen, L.B. (eds) Ultra-Wideband, Short-Pulse Electromagnetics. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-2870-8_3
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DOI: https://doi.org/10.1007/978-1-4615-2870-8_3
Publisher Name: Springer, Boston, MA
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