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Negative Differential Resistance and Instabilities in 2-D Semiconductors pp 83–98Cite as

Electron Mobility in Delta-Doped Quantum Well Structures

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Part of the book series: NATO ASI Series ((NSSB,volume 307))

Abstract

Hall effect measurements of the mobility of electrons confined in doped GaAs/AlGaAs quantum wells indicate that the ionized impurity scattering of a quasi-two-dimensional electron gas immersed in the identical concentration of ionized impurities is greater than that of a bulk electron gas of the same density. This enhancement arises from fundamental differences between 2-D and 3-D scattering of charged carriers with ionized impurities. The enhanced scattering rate may be further increased by confining the dopant ions to a delta-like doping profile in the center of the well because of the further overlap of the electronic wavefunction with the impurities. Although electrons in center delta-doped AlGaAs/GaAs quantum wells have lower low-field mobilities than do electrons in uniformly doped quantum wells, at electric fields between 2 and 4 kV/cm the differential mobility in delta-doped quantum wells rises dramatically. This large increase in differential mobility may be a result of the heating of the electrons out of the symmetric ground state into the anti-symmetric first excited state.

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Authors and Affiliations

  1. IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York, 10598, USA

    W. Ted Masselink

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  1. W. Ted Masselink
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Editor information

Editors and Affiliations

  1. University of Essex, Colchester, UK

    N. Balkan , B. K. Ridley  & A. J. Vickers ,  & 

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© 1993 Springer Science+Business Media New York

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Masselink, W.T. (1993). Electron Mobility in Delta-Doped Quantum Well Structures. In: Balkan, N., Ridley, B.K., Vickers, A.J. (eds) Negative Differential Resistance and Instabilities in 2-D Semiconductors. NATO ASI Series, vol 307. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-2822-7_5

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  • DOI: https://doi.org/10.1007/978-1-4615-2822-7_5

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-6220-3

  • Online ISBN: 978-1-4615-2822-7

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