Light Emission and Domain Formation in Real-Space Transfer Devices
Light emission from real-space transfer devices can be brought about by several mechanisms. For device application the most promising of these mechanisms is the injection of minority electrons across a semiconductor heterojunction into a p-type collecting layer. So far, problems associated with the growth of p-type collecting layers have hindered efforts in this area, resulting in inefficient light output. Our group has reported observing light emission caused by the real-space transfer of majority electrons into an n-type collecting layer. We propose a mechanism to account for this light which consists of hole creation by impact ionization of real-space transferred electrons. Microscopic observation of the spatial distribution of the light along the length and width of the channel (variations have been observed in both directions), along with its spectral distribution, gives insight into the mechanisms involved in high field domain formation in the channel of real-space transfer FETs and the contribution of high field domains to negative differential resistance. New device structures which incorporate a p-type collecting layer as the top layer of the device in order to decrease the problems associated with p-type doping in real-space transfer devices will also be discussed.
KeywordsRecombination GaAs Beryllium
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