Electronic Transport in Semiconductors at High Energies: Effects of the Energy Band Structure

  • Karl Hess
Part of the NATO ASI Series book series (NSSB, volume 307)


A number of hot electron effects in semiconductors, related to device reliability, involve scattering and accelerations at very high energies and therefore are dominated by bandstructure effects. To describe these effects quantitatively it is necessary to go beyond the usual inclusion of non-parabolicity and to use a full bandstructure as calculated, for example, from the empirical pseudopotential method. Current Monte Carlo simulations of these effects develop in two major directions. Attempts are currently being made to avoid the uncertainties of a large number of deformation potential constants for the electron phonon interaction and to treat electron phonon interaction and bandstructure within a single framework. In addition efforts are continuing to include complex quantum effects such as collisional broadening and the intracollisional field effect. These developments are reviewed using the example of the theory of impact ionization as developed by Bude which is representative in many respects for general processes that exhibit a high energy threshold.


Boltzmann Equation Impact Ionization Ionization Rate Electron Phonon Interaction Negative Differential Resistance 
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Copyright information

© Springer Science+Business Media New York 1993

Authors and Affiliations

  • Karl Hess
    • 1
  1. 1.Beckman Institute, Coordinated Science Laboratory and Department of Electrical and Computer EngineeringUniversity of Illinois, Urbana-ChampaignUSA

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