Electronic Transport in a Laterally Patterned Resonant Structure

  • M. Cemal Yalabik
Part of the NATO ASI Series book series (NSSB, volume 307)

Abstract

Non-linearities in electron transport through a mesoscopic structure due to quantum effects have generated considerable scientific interest1, and some of these structures may indeed have potential technological applications. The resonant tunneling diode is one such structure. In this device, one obtains strong nonlinearities in the current-potential difference relationship due to the change in the energy of the incident electron states with respect to a resonant state.

Keywords

GaAs Turkey 

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References

  1. 1.
    For example, see Y. Takagaki and D.K. Ferry, Double quantum point contacts in series, Phys. Rev. B45:13494 (1992) and the references therein.Google Scholar
  2. 2.
    L. Landauer, Spatial variations of currents and fields due to localized scatterers in metallic conduction, IBM J. of Res. and Dev. 1:223 (1957).MathSciNetCrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1993

Authors and Affiliations

  • M. Cemal Yalabik
    • 1
  1. 1.Department of PhysicsBilkent UniversityAnkaraTurkey

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