Electronic Transport in a Laterally Patterned Resonant Structure
Non-linearities in electron transport through a mesoscopic structure due to quantum effects have generated considerable scientific interest1, and some of these structures may indeed have potential technological applications. The resonant tunneling diode is one such structure. In this device, one obtains strong nonlinearities in the current-potential difference relationship due to the change in the energy of the incident electron states with respect to a resonant state.
KeywordsTransmission Coefficient Electron Incident Resonant Tunneling Negative Differential Resistance Fermi Distribution
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- 1.For example, see Y. Takagaki and D.K. Ferry, Double quantum point contacts in series, Phys. Rev. B45:13494 (1992) and the references therein.Google Scholar