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Multi-Quantum Well Integrated Stacks for Detection in the Mid-Infrared

  • I. Gravé
  • A. Shakouri
  • N. Kuze
  • A. Yariv

Abstract

The development and improvement of advanced epitaxial crystal growth techniques such as molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) during the last two decades, has opened the door for the realization of devices in the quantum size regime. Quantum size phenomena can be observed when the experimental dimensions approach the order of magnitude of the DeBroglie wavelength associated with the system under investigation. The tools needed to understand and design artificial semiconductor structures, are known under the label “bandgap engineering.”

Keywords

Applied Voltage Drift Velocity Interband Transition Infrared Detector Negative Differential Resistance 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1994

Authors and Affiliations

  • I. Gravé
    • 1
  • A. Shakouri
    • 1
  • N. Kuze
    • 1
  • A. Yariv
    • 1
  1. 1.California Institute of TechnologyCaltech, PasadenaUSA

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