Low-Power CMOS Random Access Memory Circuits

  • Abdellatif Bellaouar
  • Mohamed I. Elmasry

Abstract

Low-power Random Access Memory (RAM) has seen a remarkable and rapid progress in power reduction. Many circuits techniques for active and standby power reduction in static and dynamic RAMs have been devised. In this chapter we study low-power memory circuit techniques which are very interesting for several other applications. Among these circuits, we examine memory cells, sense amplifiers, precharging circuits, etc. Circuit techniques for 1.x V power supply are also discussed. The voltage targets using NiCd and Mn batteries are 1.2 and 1.5 V respectively. The minimum voltage of a NiCd cell is 0.9 V. Also we consider the Voltage Down Converters (VDCs) which are used in memories and processors. No consideration is given to the detail of designing a complete memory chip because a single configuration requires an entire book.

Keywords

Assure Trench Kato Ferro Polysilicon 

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Copyright information

© Springer Science+Business Media New York 1995

Authors and Affiliations

  • Abdellatif Bellaouar
    • 1
  • Mohamed I. Elmasry
    • 1
  1. 1.University of WaterlooCanada

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