Substrate Modeling in Heavily-Doped Bulk Processes
In Chapter 4 substrate models were developed and discussed that are valid for any process technology in silicon. Additionally, for processes with an epitaxial layer on a heavily-doped bulk (doping density of 1018/cm3 or higher) as is typical of many CMOS technologies, a simpler model can be used-the single node model [6.1],[6.2] In this chapter we will discuss the single-node model, its advantages and limitations and some ways to overcome the latter.
KeywordsCurrent Flow Epitaxial Layer Single Node Substrate Modeling Bond Wire
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