Substrate Modeling in Heavily-Doped Bulk Processes

  • Nishath K. Verghese
  • Timothy J. Schmerbeck
  • David J. Allstot
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 302)

Abstract

In Chapter 4 substrate models were developed and discussed that are valid for any process technology in silicon. Additionally, for processes with an epitaxial layer on a heavily-doped bulk (doping density of 1018/cm3 or higher) as is typical of many CMOS technologies, a simpler model can be used-the single node model [6.1],[6.2] In this chapter we will discuss the single-node model, its advantages and limitations and some ways to overcome the latter.

Keywords

Epoxy Resis 

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References

  1. [6.1]
    T.J. Schmerbeck, R.A. Richetta, and L.D. Smith, “A 27 MHZ mixed A/D magnetic recording channel DSP using partial response signalling with maximum likelihood detection,”Technical Digest of the International Solid State Circuits Conferencepp. 136–137, Feb. 1991Google Scholar
  2. [6.2]
    D.K. Su, M.J. Loinaz, S. Masui and B.A. Wooley, “Experimental Results and Modeling Techniques for Substrate Noise in Mixed-Signal Integrated Circuits, ”IEEE Journal of Solid State Circuitsvol. 28, no. 4, April 1993.Google Scholar

Copyright information

© Springer Science+Business Media New York 1995

Authors and Affiliations

  • Nishath K. Verghese
    • 1
  • Timothy J. Schmerbeck
    • 2
  • David J. Allstot
    • 1
  1. 1.Carnegie Mellon UniversityUSA
  2. 2.IBM. RochesterUSA

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