Quantum Phenomena and Their Applications in Semiconductor Microstructures

  • Federico Capasso
Part of the NATO ASI Series book series (NSSB, volume 347)


During the last decade a powerful new approach for designing semiconductor structures with tailored electronic and optical properties, bandgap engineering, has spawned a new generation of semiconductor materials and of electronic and photonic devices.1 Central to bandgap engineering is the notion that by spatially varying the composition and the doping of a semiconductor over distances ranging from a few microns down to ≈ 2.5 Å (≈ 1 monolayer), one can tailor the band structure of a material in a nearly arbitrary and continuous way.1 Thus semiconductor structures with new electronic and optical properties can be custom-designed for specific applications.


Second Harmonic Generation Quantum Cascade Laser Resonant Tunneling Bipolar Transistor Negative Differential Resistance 
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Copyright information

© Springer Science+Business Media New York 1995

Authors and Affiliations

  • Federico Capasso
    • 1
  1. 1.AT&T Bell LaboratoriesMurray HillUSA

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