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Three-Dimensional Quantum Transport Simulations of Transmission Fluctuations in a Quantum Dot

  • S. K. Kirby
  • D. Z.-Y. Ting
  • T. C. McGill
Part of the NATO ASI Series book series (NSSB, volume 342)

Abstract

Semiconductor nanostructures exhibiting reduced dimensionality, such as quantum wells, wires and dots, have recently drawn much attention. With characteristic dimensions comparable to the electron de Broglie wavelength, these structures operate in the quantum regime and are sensitive to atomic scale variations in geometry and composition. Defect impurities and interface roughness, for example, can alter transport properties (e. g. Mitin, 1990; McEuen et al., 1990; Eugster et al., 1992; Bagwell, 1991; Nixon and Baranger, 1991). In this paper we employ the planar supercell stack method (Kirby et al., 1993, Ting et al., 1993) to study sample to sample transmission resonance fluctuations resulting from variations in interface roughness and neutral impurities in a quantum dot electron waveguide.

Keywords

Band Edge Resonance Width Reference Structure Interface Roughness Resonance Position 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer Science+Business Media New York 1995

Authors and Affiliations

  • S. K. Kirby
    • 1
  • D. Z.-Y. Ting
    • 1
  • T. C. McGill
    • 1
  1. 1.Thomas J. Watson, Sr., Laboratory of Applied PhysicsCalifornia Institute of TechnologyPasadenaUSA

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