Effects of Rotation on Transport Processes During Crystal Growth By Solidification
The control of heat flow, dopant segregation, and the shape of the growth interface is an important task in bulk crystal growth.1,2 A flat or slightly convex growth front is highly desired to minimize parasitic nucleation. Dopant uniformity, both radial and axial, is also a major concern. Therefore, better understanding of the melt flow and heat and mass transfer during crystal growth is important. In solidification the intrinsic coupling of transport processes to phenomena at the growth interface strongly influences crystal quality. For example, unstable flow can cause growth striations, sometimes even leading to periodic or chaotic back melting.
KeywordsZinc Furnace Convection Cadmium GaAs
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