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Effects of Ordering on Physical Properties of Semiconductor Alloys

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Spontaneous Ordering in Semiconductor Alloys

Abstract

Many III-V semiconductor alloys AxB1-xC exhibit spontaneous CuPt-like ordering when grown from the vapor phase. This article describes theoretically the ordering induced changes in the structural, electronical, and optical properties of the semiconductor alloys as a function of the long range order parameter η. These include (i) the band gap reduction △Eg and the valence band splitting △E12, (ii) the appearence of new structural factors, (iii) the change of electric field gradient at the nuclear sites, (iv) the consequence of coexistence of epitaxial strain and chemical ordering on the optical properties, (v) the ordering induced optical anisotropy, and (vi) the spin polarization of photoemitted electrons near the band edge. The effects of stacking fault in order semiconductor alloys are also discussed.

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Authors and Affiliations

  1. National Renewable Energy Laboratory, Golden, CO, 80401, USA

    Su-Huai Wei

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  1. Su-Huai Wei
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  1. National Renewable Energy Laboratory (NREL), Golden, Colorado, USA

    Angelo Mascarenhas

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Wei, SH. (2002). Effects of Ordering on Physical Properties of Semiconductor Alloys. In: Mascarenhas, A. (eds) Spontaneous Ordering in Semiconductor Alloys. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-0631-7_15

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  • DOI: https://doi.org/10.1007/978-1-4615-0631-7_15

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-5167-2

  • Online ISBN: 978-1-4615-0631-7

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