In plasma etching of silicon substrates, electron-impact on a halogen-containing feed gas creates chemically-active ions and radicals that react with silicon to form volatile SiXy (X = halogen) species. Unfortunately, the most widely-used feed gas, CF4, has a high global warming potential.1 As a consequence, other halocarbons are being considered as replacements for CF4. Trifluoroiodomethane, CF3I, is a promising candidate: It has a low global-warming potential2 and plasma-etching of silicon dioxide with CF3I has recently been demonstrated3-5.
KeywordsSilicon Surface Plasma Etching Uptake Measurement Sticking Probability Dissociative Chemisorption
Unable to display preview. Download preview PDF.
- 1.Climate Change 1995: The Science of Climate Change, edited by J. T. Houghton, L. G. M. Filho, B. A. Callander, N. Harris, A. Kattenberg, and K. Maskell (Cambridge University Press, Cambridge, 1996).Google Scholar
- 6.E. Illenberger, in: Linking the Gaseous and Condensed Phases of Matter - The Behavior of Slow Electrons, edited by L. G. Christophorou, E. Illenberger, and W. F. Schmidt (Plenum Press, New York, 1994).Google Scholar
- 9.G. D. Cooper, J. E. Sanabia, J. Orloff, and J. H. Moore, Electron-stimulated desorption from the products ofchemisorption of trifluorochloroethene on silicon, Int. J. Mass Spec, (in press).Google Scholar
- 18.H. Lüth,Surfaces and Interfaces of Solids (Springer- Verlag, Berlin, 1993).Google Scholar