In plasma etching of silicon substrates, electron-impact on a halogen-containing feed gas creates chemically-active ions and radicals that react with silicon to form volatile SiXy (X = halogen) species. Unfortunately, the most widely-used feed gas, CF4, has a high global warming potential.1 As a consequence, other halocarbons are being considered as replacements for CF4. Trifluoroiodomethane, CF3I, is a promising candidate: It has a low global-warming potential2 and plasma-etching of silicon dioxide with CF3I has recently been demonstrated3-5.
KeywordsDioxide Ozone Iodine Tungsten Iodide
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