Abstract
In-situ X-ray Photoemission Spectroscopy (XPS) has been employed in our lab to study the initial formation of tantalum (Ta) and titanium (Ti) nitride barriers on low dielectric constant (low-k) materials. The effects of low energy (100/500eV) nitrogen ion bombardment were examined in order to understand how the interface could be modified or controlled. This paper summarizes recent results on SiLK* in comparison with Bisbenzocyclobutene (BCB*) (*trademark of the Dow Chemical Company). In-situ XPS studies showed that tantalum or titanium reacted with SiLK very strongly. Carbides and sub-oxides formed immediately upon the deposition of tantalum on SiLK. Compared with BCB, SiLK was found to have both similar binding to tantalum nitride and a similar amount of nitride incorporation near the interface. Moreover, the addition of a low-energy nitrogen ion beam can slightly increase the chemical bonding between the barrier and the low-k without inducing significant intermixing.
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References
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Abramowitz, P., Liu, J., Kiene, M., Ho, P.S., Im, J. (2002). Chemistry in the Initial Formation of Nitride Barriers on Low-K Dielectrics. In: Sacher, E. (eds) Metallization of Polymers 2. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-0563-1_13
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DOI: https://doi.org/10.1007/978-1-4615-0563-1_13
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