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Growth and Doping of Semiconductor Compounds: Kinetics of Incorporation Processes at Kink Sites

  • Yu. Yu. Hervieu
  • M. P. Ruzaikin
Chapter
Part of the Рост Кристаллов / Rost Kristallov / Growth of Crystals book series (GROC, volume 21)

Abstract

It can be inferred from currently available experimental data that specific features of the formation of point defects and nonuniform impurity distribution in thin layers of binary semiconductors result from specific features of the incorporation of host and impurity atoms at kink sites. In particular, statistical correlations between elementary events occurring at step kinks may play an important role in the growth of semiconductor materials by MBE (molecular-beam epitaxy) and CVD (chemical vapor deposition).

Keywords

Impurity Atom Impurity Concentration Cooperative Effect Antisite Defect Host Atom 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Kluwer Academic/Plenum Publishers, New York 2002

Authors and Affiliations

  • Yu. Yu. Hervieu
  • M. P. Ruzaikin

There are no affiliations available

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