Growth and Doping of Semiconductor Compounds: Kinetics of Incorporation Processes at Kink Sites
It can be inferred from currently available experimental data that specific features of the formation of point defects and nonuniform impurity distribution in thin layers of binary semiconductors result from specific features of the incorporation of host and impurity atoms at kink sites. In particular, statistical correlations between elementary events occurring at step kinks may play an important role in the growth of semiconductor materials by MBE (molecular-beam epitaxy) and CVD (chemical vapor deposition).
KeywordsCrystallization Phosphorus Arsenic GaAs Supersaturation
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- 1.A. A. Chernov, “Crystallization of binary systems as a random walk problem,” in: Proceedings of the International Conference on Crystal Growth, Boston (1966) pp. 25–36.Google Scholar
- 2.A. A. Chernov, “Growth of copolymer chains and mixed crystals: statistics of trials and errors,” Usp. Fiz. Nauk, 13 111–162 (1970).Google Scholar
- 3.W. Feller, An Introduction to Probability Theory and Its Applications, Wiley, New York (1970).Google Scholar
- 4.G. Bliznakov, “Sur le méchanisme de l’action des additifs adsorbants dans la croissance cristalline”, in: Adsorption et croissance cristalline, Centre Nat. Rech. Sci., Paris (1965), pp. 291–300.Google Scholar
- 6.V. V. Voronkov, “Effect of an impurity on the rate of layer growth from a melt,” Kristallografiya, 19 No. 3, 475–481 (1974).Google Scholar
- 7.A. A. Chernov, “Crystallization processes,” in: Modern Crystallography, Vol. 3: Crystal Growth, Springer, Berlin (1984), pp. 1–297.Google Scholar
- 8.J. Bloem and L. J. Gilling, “Mechanisms of chemical vapor deposition of silicon,” in: Current Topics in Materials Science, Vol. 1, E. Kaldis, Ed., North-Holland, Amsterdam, (1978), pp. 147–342.Google Scholar
- 10.B. A. Joyce, C. T. Foxon, and J. H. Neave, “Fundamentals of molecular beam epitaxy,” Nippon Kessho Seicho Gakkaishi (J. Jpn. Assoc. Cryst. Growth), 5 185–197 (1978).Google Scholar
- 11.D. E. Temkin, “Movement of a rectilinear step during a diffusionless phase transformation,” Kristallografiya, 19 No. 3, 467–474 (1974).Google Scholar
- 13.M. P. Ruzaikin and Yu. Yu. Hervieu, “Layer-by-layer growth of multicomponent crystals at small deviations from equilibrium,” Kristallografiya, 34 No. 4, 812–817 (1989).Google Scholar
- 16.M. P. Ruzaikin and Yu. Yu. Hervieu, “Relationships between the characteristics of stationary and nonstationary capture of impurity in the deposition from molecular beams,” Russ. Phys. J., 38 No. 8, 854–858, (1996).Google Scholar
- 17.M. P. Ruzaikin and Yu. Yu. Hervieu, “Effect of pushing-off of an impurity by the step at the initial stage of its capture at crystallization from a molecular beans, ” Kristallografiya, 41 No. 4, 597–601 (1996).Google Scholar