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A Review of Fractal Conductance Fluctuations in Ballistic Semiconductor Devices

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Book cover Electron Transport in Quantum Dots

Abstract

The ability to scale device sizes to below a micro-meter has profound implications for electron conduction in semiconductor systems. For conventional circuits, the reduced component size offers the rewards of higher packing densities and faster operating speeds. However, in terms of the search for new classes of electronic devices, designed to replace the transistor as the basic component of electronic circuits, the prospect of current flow across sub-micron distances holds even greater potential. Traditional current flow concepts, in which electron propagation along the device’s length is modeled as a classical diffusion process, can no longer be applied. Both the classical and quantum mechanical transmission characteristics may ultimately be harnessed to produce revolutionary modes of device functionality. Intimately coupled to these objectives of applied physics, sub-micron devices also provide a novel environment for the study of a rich variety of fundamental semiconductor physics.

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Authors and Affiliations

  1. Department of Physics, University of Oregon, Eugene, OR, 97403-;1274, USA

    R. Taylor, H. Linke, T. Martin & C. Marlow

  2. School of Physics, University of New South Wales, Sydney, 2052, Australia

    R. Newbury & A. Micolich

  3. School of Physics and Astronomy, Nottingham University, Nottingham, NG7 2RD, UK

    M. Fromhold

  4. Cavendish Laboratory, Cambridge University, Cambridge, CB3 0HE, UK

    G. Davies

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  1. Department of Electrical Engineering, Arizona State University, Tempe, Arizona, USA

    Jonathan P. Bird (Associate Professor, Visiting Professor) (Associate Professor, Visiting Professor)

  2. Center for Frontier Elecronics and Photonics, Chiba University, Chiba, Japan

    Jonathan P. Bird (Associate Professor, Visiting Professor) (Associate Professor, Visiting Professor)

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Taylor, R. et al. (2003). A Review of Fractal Conductance Fluctuations in Ballistic Semiconductor Devices. In: Bird, J.P. (eds) Electron Transport in Quantum Dots. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-0437-5_7

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