Abstract
In the previous chapter, the MTCMOS technique was used to reduce standby leakage power in combinational logic circuits, while attaining a sufficient performance. However, special attention must be paid to the MTCMOS design of sequential logic circuits such as latches and flip-flops (FFs) that have memory functions; this is necessary because stored data in the latch or FF circuits cannot be retained during the sleep standby mode because the virtual ground rails would be floating to cut off the leakage current. This would disconnect the storage nodes from the true power supply rails and possibly corrupt the stored data.
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Further Reading
R. Ramanarayanan, N. Vijaykrishnan, and M. Irwin, “Characterizing Dynamic and Leakage Power Behavior in Flip-Flops,” in Proc. IEEE ASIC/SOC Conference, pp.433–437, September 2002.
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J. Wang and H. Li, “0.9-V Sense-Amplifier-Based Reduced-Clock-Swing MTCMOS Flip-Flops,” in Proc. IEEE Asia-Pacific Conference on ASIC, pp.271–274, August 2002.
M. Stan and M. Barcella, “MTCMOS with Outer Feedback (MTOF) Flip-Flops,” in Proc. IEEE International Symposium on Circuits and Systems, Vol.5, pp.429–432, May 2003.
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Anis, M., Elmasry, M. (2003). MTCMOS Sequential Circuits. In: Multi-Threshold CMOS Digital Circuits. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-0391-0_5
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DOI: https://doi.org/10.1007/978-1-4615-0391-0_5
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