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Profile Simulation

  • Francis F. Chen
  • Jane P. Chang

Abstract

Numerous models for profile evolution in plasma etching and deposition can be found in the literature. All of these models depend upon the user entering into the model, information for the etching or deposition kinetics, e.g. ion enhanced etching rate, ion directionality, spontaneous deposition rate, sticking probability of reactants, etc. Various algorithms are then used to compute the movement of the surface with time and display it. The most common programs in use are 3-D Simulator (UIUC), SAMPLE (Berkeley), EVOLVE (RPI) and SPEEDIE (Stanford). Each of these models presently have the capabilities to include certain physical mechanisms that were discussed above.

Keywords

Plasma Etching Sticking Probability Molecular Chlorine Beam Plane Polysilicon Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 2003

Authors and Affiliations

  • Francis F. Chen
    • 1
  • Jane P. Chang
    • 2
  1. 1.Electrical Engineering DepartmentUniversity of CaliforniaLos AngelesUSA
  2. 2.Chemical Engineering DepartmentUniversity of CaliforniaLos AngelesUSA

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