Numerous models for profile evolution in plasma etching and deposition can be found in the literature. All of these models depend upon the user entering into the model, information for the etching or deposition kinetics, e.g. ion enhanced etching rate, ion directionality, spontaneous deposition rate, sticking probability of reactants, etc. Various algorithms are then used to compute the movement of the surface with time and display it. The most common programs in use are 3-D Simulator (UIUC), SAMPLE (Berkeley), EVOLVE (RPI) and SPEEDIE (Stanford). Each of these models presently have the capabilities to include certain physical mechanisms that were discussed above.
KeywordsPlasma Etching Sticking Probability Molecular Chlorine Beam Plane Polysilicon Film
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